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Rodrigo B. Capaz

Researcher at Federal University of Rio de Janeiro

Publications -  192
Citations -  12730

Rodrigo B. Capaz is an academic researcher from Federal University of Rio de Janeiro. The author has contributed to research in topics: Graphene & Carbon nanotube. The author has an hindex of 40, co-authored 182 publications receiving 11390 citations. Previous affiliations of Rodrigo B. Capaz include Universidade Federal de Viçosa & Massachusetts Institute of Technology.

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Quantifying defects in graphene via Raman spectroscopy at different excitation energies

TL;DR: It is found that the ratio between the D and G peak intensities, for a given defect density, strongly depends on the laser excitation energy, and a simple equation for the determination of the point defect density in graphene via Raman spectroscopy is presented.
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Quantifying defects in graphene via Raman spectroscopy at different excitation energies.

TL;DR: In this paper, a Raman study of Ar+-bombarded graphene samples with increasing ion doses was conducted and it was shown that the ratio between the D and G peak intensities strongly depends on the laser excitation energy.
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Quantifying ion-induced defects and Raman relaxation length in graphene

TL;DR: In this paper, the evolution of the intensity ratio between the G band (1585 cm−1) and the disorder-induced D band (1345 cm −1) with ion dose is determined, providing a spectroscopy-based method to quantify the density of defects in graphene.
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Evolution of the Raman spectra from single-, few-, and many-layer graphene with increasing disorder

TL;DR: In this paper, the authors report on the micro-Raman spectroscopy of monolayer, bilayer, trilayer and many layers of graphene (graphite) bombarded by low-energy argon ions with different doses.