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N. N. Ledentsov
Researcher at Warsaw University of Technology
Publications - 177
Citations - 3249
N. N. Ledentsov is an academic researcher from Warsaw University of Technology. The author has contributed to research in topics: Quantum dot & Laser. The author has an hindex of 31, co-authored 177 publications receiving 3093 citations.
Papers
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Journal ArticleDOI
The role of Auger recombination in the temperature-dependent output characteristics (T0=∞) of p-doped 1.3 μm quantum dot lasers
Sasan Fathpour,Zetian Mi,P. K. Bhattacharya,A. R. Kovsh,S. S. Mikhrin,Igor Krestnikov,A. V. Kozhukhov,N. N. Ledentsov +7 more
TL;DR: In this paper, a self-consistent model has been employed to calculate the various radiative and nonradiative current components in p-doped and undoped laser and to analyze the measured data.
Journal ArticleDOI
High performance quantum dot lasers on GaAs substrates operating in 1.5 [micro sign]m range
N. N. Ledentsov,A. R. Kovsh,A. E. Zhukov,Nikolay A. Maleev,S. S. Mikhrin,A. P. Vasil’ev,Elizaveta Semenova,Mikhail V. Maximov,Yu. M. Shernyakov,N. V. Kryzhanovskaya,V. M. Ustinov,Dieter Bimberg +11 more
TL;DR: Stacked InAs/InGaAs quantum dots are used as an active media of metamorphic InGaAs-InGaAlAs lasers grown on GaAs substrates by molecular beam epitaxy as discussed by the authors.
Journal ArticleDOI
High power temperature-insensitive 1.3 µm InAs/InGaAs/GaAs quantum dot lasers
S. S. Mikhrin,A. R. Kovsh,Igor Krestnikov,A. V. Kozhukhov,D.A. Livshits,N. N. Ledentsov,Yu. M. Shernyakov,Innokenty I. Novikov,Mikhail V. Maximov,V. M. Ustinov,Zh. I. Alferov +10 more
TL;DR: In this paper, GaAs-based broad area (100 µm) 1.3 µm quantum dot (QD) laser with high CW output power (5 W) and wall-plug efficiency (56%) was demonstrated.
Journal ArticleDOI
High-Speed Transmission in Multimode Fibers
TL;DR: The theoretical background of MMF transmission is discussed and an overview on system characterization and existing standards are given and the challenges on reach, speed, and capacity-extension techniques for next generations ofMMF systems are discussed.
Journal ArticleDOI
Oxide-confined 850 nm VCSELs operating at bit rates up to 40 Gbit/s
Sergey A. Blokhin,James A. Lott,Alex Mutig,Gerrit Fiol,N. N. Ledentsov,Mikhail V. Maximov,Alexey M. Nadtochiy,Vitaly Shchukin,Dieter Bimberg +8 more
TL;DR: In this paper, an oxide-confined 850 nm vertical-cavity surface-emitting laser operating at 40 Gbit/s at current densities ~10 kA/cm 2 is realized.