S
S. Subramanya
Publications - 5
Citations - 809
S. Subramanya is an academic researcher. The author has contributed to research in topics: Light-emitting diode & Epitaxy. The author has an hindex of 3, co-authored 5 publications receiving 792 citations.
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Journal ArticleDOI
High-power AlGaInN flip-chip light-emitting diodes
Jonathan J. Wierer,Daniel A. Steigerwald,Michael R. Krames,J. O'Shea,M. J. Ludowise,G. Christenson,Y. C. Shen,C. H. Lowery,Paul S. Martin,S. Subramanya,W. Götz,Nathan F. Gardner,R. S. Kern,S. A. Stockman +13 more
TL;DR: In this article, the authors presented a flip-chip light-emitting diodes (FCLEDs) with a large emitting area (∼0.70 mm2) and an optimized contacting scheme allowing high current (200-1000 mA, J∼30-143 A/cm2) operation with low forward voltages.
Journal ArticleDOI
High Power LEDs - Technology Status and Market Applications
Frank M. Steranka,Jerome Chandra Bhat,D. Collins,Lou W. Cook,M.G. Craford,Robert M Fletcher,Nathan F. Gardner,Patrick N. Grillot,Werner Goetz,Matthijs H. Keuper,Reena Khare,Andrew Y. Kim,Michael R. Krames,Gerard Harbers,M. J. Ludowise,Paul S. Martin,Mira S. Misra,Gerd O. Mueller,Regina Mueller-Mach,Serge L Rudaz,Y. C. Shen,Daniel A. Steigerwald,S. A. Stockman,S. Subramanya,Troy A. Trottier,Jonathan J. Wierer +25 more
TL;DR: In this article, the key design features of high power light emitting diodes (LEDs) are covered with special emphasis on power packaging, flip-chip device design, and phosphor coating technology.
Packaging challenges of high-power LEDs for solid state lighting
Shatil Haque,Dan A. Steigerwald,Serge L Rudaz,Bob Steward,Jerome Chandra Bhat,D. Collins,Frank Wall,S. Subramanya,Chris Elpedes,Phil Elizondo,Paul S. Martin +10 more
Proceedings ArticleDOI
High-power AlInGaN light-emitting diodes
Jonathan J. Wierer,Jerome Chandra Bhat,Chien-Hua Chen,G. Christenson,Lou W. Cook,M. G. Craford,Nathan F. Gardner,Werner Goetz,R Scott Kern,Reena Khare,Andrew Y. Kim,Michael R. Krames,M. J. Ludowise,Richard Mann,Paul S. Martin,Mira S. Misra,J. O'Shea,Yu-Chen Shen,Frank M. Steranka,S. A. Stockman,S. Subramanya,Serge L. Rudaz,Dan A. Steigerwald,Jingxi Yu +23 more
TL;DR: In this article, a flip-chip-based high-power light-emitting diodes (LEDs) in both the AlInGaP (red to amber) and the AlGaInN (blue-green) material systems are presented.
Proceedings ArticleDOI
High-flux and high-efficiency nitride-based light-emitting devices
Nathan F. Gardner,Jerome Chandra Bhat,D. Collins,Lou W. Cook,M.G. Craford,Robert M Fletcher,Patrick N. Grillot,W. Götz,M. Kueper,Reena Khare,Andrew Y. Kim,Michael R. Krames,Gerard Harbers,M. J. Ludowise,Paul S. Martin,Mira S. Misra,Gerd O. Mueller,Regina Mueller-Mach,Serge L Rudaz,Y. C. Shen,Daniel A. Steigerwald,S. A. Stockman,S. Subramanya,Troy A. Trottier,Jonathan J. Wierer +24 more
TL;DR: In this article, the role of dislocations is not well-understood, although there is clear evidence that laser reliability is improved by reducing their density, and a suitable lattice-matched substrate for epitaxy of AlInGaN films is proposed.