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Nathan F. Gardner
Researcher at Philips Lumileds Lighting Company
Publications - 84
Citations - 4745
Nathan F. Gardner is an academic researcher from Philips Lumileds Lighting Company. The author has contributed to research in topics: Layer (electronics) & Light-emitting diode. The author has an hindex of 25, co-authored 83 publications receiving 4650 citations. Previous affiliations of Nathan F. Gardner include Hewlett-Packard & Philips.
Papers
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Journal ArticleDOI
Auger recombination in InGaN measured by photoluminescence
TL;DR: In this paper, the Auger recombination coefficient in quasi-bulk InxGa1−xN (x∼9%−15%) layers grown on GaN (0001) is measured by a photoluminescence technique.
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High-power AlGaInN flip-chip light-emitting diodes
Jonathan J. Wierer,Daniel A. Steigerwald,Michael R. Krames,J. O'Shea,M. J. Ludowise,G. Christenson,Y. C. Shen,C. H. Lowery,Paul S. Martin,S. Subramanya,W. Götz,Nathan F. Gardner,R. S. Kern,S. A. Stockman +13 more
TL;DR: In this article, the authors presented a flip-chip light-emitting diodes (FCLEDs) with a large emitting area (∼0.70 mm2) and an optimized contacting scheme allowing high current (200-1000 mA, J∼30-143 A/cm2) operation with low forward voltages.
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High-power truncated-inverted-pyramid (AlxGa1−x)0.5In0.5P/GaP light-emitting diodes exhibiting >50% external quantum efficiency
Michael R. Krames,M. Ochiai-Holcomb,Gloria E Hofler,Carrie Carter-Coman,E. I. Chen,I.-H. Tan,P.N. Grillot,Nathan F. Gardner,Herman C Chui,J.-W. Huang,S. A. Stockman,F. A. Kish,M. G. Craford,T. S. Tan,C. P. Kocot,M. Hueschen,J. Posselt,B. Loh,G. Sasser,D. Collins +19 more
TL;DR: In this article, a truncated-inverted-pyramid (TIP) chip geometry was proposed to decrease the mean photon path length within the crystal, and thus reduce the effects of internal loss mechanisms.
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InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal structures
Jonathan J. Wierer,Michael R. Krames,John Edward Epler,Nathan F. Gardner,M.G. Craford,Joel R. Wendt,Jerry A. Simmons,Mihail M. Sigalas +7 more
TL;DR: In this article, a triangular lattice photonic crystal is formed by dry etching into the top GaN layer, and the chosen lattice spacing causes Bragg scattering of guided modes out of the LED, increasing the extraction efficiency.
Journal ArticleDOI
Carrier distribution in (0001)InGaN∕GaN multiple quantum well light-emitting diodes
Aurelien David,Michael Grundmann,John F. Kaeding,Nathan F. Gardner,Theodoros G. Mihopoulos,Michael R. Krames +5 more
TL;DR: In this paper, the carrier distribution in multi quantum well (multi-QW) InGaN light-emitting diodes was studied and it was shown that, no matter how many QWs are grown, only the QW nearest the p layer emits light under electrical pumping, which can limit the performances of high power devices.