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Werner Goetz
Researcher at Hewlett-Packard
Publications - 16
Citations - 477
Werner Goetz is an academic researcher from Hewlett-Packard. The author has contributed to research in topics: Light-emitting diode & Quantum efficiency. The author has an hindex of 7, co-authored 16 publications receiving 466 citations.
Papers
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Journal ArticleDOI
High Power LEDs - Technology Status and Market Applications
Frank M. Steranka,Jerome Chandra Bhat,D. Collins,Lou W. Cook,M.G. Craford,Robert M Fletcher,Nathan F. Gardner,Patrick N. Grillot,Werner Goetz,Matthijs H. Keuper,Reena Khare,Andrew Y. Kim,Michael R. Krames,Gerard Harbers,M. J. Ludowise,Paul S. Martin,Mira S. Misra,Gerd O. Mueller,Regina Mueller-Mach,Serge L Rudaz,Y. C. Shen,Daniel A. Steigerwald,S. A. Stockman,S. Subramanya,Troy A. Trottier,Jonathan J. Wierer +25 more
TL;DR: In this article, the key design features of high power light emitting diodes (LEDs) are covered with special emphasis on power packaging, flip-chip device design, and phosphor coating technology.
Patent
Indium gallium nitride smoothing structures for III-nitride devices
Werner Goetz,Michael D. Camras,Nathan F. Gardner,R Scott Kern,Andrew Y. Kim,Stephen A Stockman +5 more
TL;DR: A smoothing structure containing indium is formed between the substrate and the active region of a III-nitride light emitting device to improve the surface characteristics of the device layers as mentioned in this paper.
Proceedings ArticleDOI
High-brightness AlGaInN light-emitting diodes
Michael R. Krames,G. Christenson,D. Collins,Lou W. Cook,M. G. Craford,Alice Edwards,Robert M Fletcher,Nathan F. Gardner,Werner Goetz,William R. Imler,Eric Scott Johnson,R Scott Kern,Reena Khare,Frederick A. Kish,Christopher H. Lowery,M. J. Ludowise,Richard Mann,M. Maranowski,Steven A Maranowski,Paul S. Martin,J. O'Shea,Serge L Rudaz,Dan A. Steigerwald,John F. Thompson,Jonathan J. Wierer,Jingxi Yu,David Paul Basile,Ying-Lan Chang,Ghulam Hasnain,M. Heuschen,Kevin Killeen,Christophe P. Kocot,Steven D. Lester,Jeffrey N. Miller,Gerd O. Mueller,Regina Mueller-Mach,S. Jeffrey Rosner,Richard P. Schneider,T. Takeuchi,Tun S. Tan +39 more
TL;DR: In this paper, the authors present and potential applications for high-power AlGaInN LEDs, including traffic signals and contour lighting, and discuss their performance in terms of output power and efficiency.
Patent
Strain-controlled III-nitride light emitting device
TL;DR: In this paper, a ternary or quaternary light emitting layer is configured to control the degree of phase separation in a III-nitride light emitting device, where the ratio of the lattice constant in a relaxed, free standing layer having the same composition as the LEM layer to the base region is calculated.
Journal ArticleDOI
High Performance AlGaInN Ultraviolet Light-Emitting Diode at the 340 nm Wavelength
Seong-Ran Jeon,M. Gherasimova,Z. Ren,Jie Su,G. Cui,Jung Han,Hongbo Peng,Yoon-Kyu Song,Arto V. Nurmikko,Ling Zhou,Werner Goetz,Michael R. Krames +11 more
TL;DR: In this article, high output power from the quaternary AlGaInN multiple quantum well (MQW) ultraviolet light emitting diodes (UV LEDs) in the 340 nm wavelength range was measured under room temperature cw operation.