S
Sadahiko Miura
Researcher at Tohoku University
Publications - 79
Citations - 2275
Sadahiko Miura is an academic researcher from Tohoku University. The author has contributed to research in topics: Tunnel magnetoresistance & Power gating. The author has an hindex of 28, co-authored 78 publications receiving 2112 citations. Previous affiliations of Sadahiko Miura include NEC & Waseda University.
Papers
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Proceedings Article
Low-current perpendicular domain wall motion cell for scalable high-speed MRAM
Shunsuke Fukami,Tetsuhiro Suzuki,Kiyokazu Nagahara,Norikazu Ohshima,Y. Ozaki,S. Saito,Ryusuke Nebashi,Noboru Sakimura,Hiroaki Honjo,Kaoru Mori,C. Igarashi,Sadahiko Miura,Nobuyuki Ishiwata,Tadahiko Sugibayashi +13 more
TL;DR: In this article, a magnetic random access memory with current-induced domain wall (DW) motion (DW-motion MRAM) was proposed. But its potential of 0.1-mA and 2-ns writing with sufficient thermal stability was not analyzed.
Journal ArticleDOI
High critical currents in epitaxial YBa2Cu3O7−x thin films on silicon with buffer layers
X. D. Wu,A. Inam,M. S. Hegde,B. Wilkens,C. C. Chang,D. M. Hwang,L. Nazar,Thirumalai Venkatesan,Sadahiko Miura,Shogo Matsubara,Yoichi Miyasaka,Nobuaki Shohata +11 more
TL;DR: In this article, as-deposited superconducting thin films (∼0.1 μm) of YBa2Cu3O7−x have been prepared by pulsed laser deposition on (100) Si with buffer layers of BaTiO3/MgAl2O4.
Proceedings ArticleDOI
10.5 A 90nm 20MHz fully nonvolatile microcontroller for standby-power-critical applications
Noboru Sakimura,Yukihide Tsuji,Ryusuke Nebashi,Hiroaki Honjo,Ayuka Morioka,Kunihiko Ishihara,Keizo Kinoshita,Shunsuke Fukami,Sadahiko Miura,Naoki Kasai,Tetsuo Endoh,Hideo Ohno,Takahiro Hanyu,Tadahiko Sugibayashi +13 more
TL;DR: This work demonstrates a fully nonvolatile 16b MCU using 90nm standard CMOS and three-terminal SpinRAM technology that provides sufficiently long battery life to achieve maintenance-free sensor nodes.
Proceedings ArticleDOI
A 90nm 12ns 32Mb 2T1MTJ MRAM
Ryusuke Nebashi,Noboru Sakimura,Hiroaki Honjo,S. Saito,Y. Ito,Sadahiko Miura,Yoshitake Kato,Kaoru Mori,Yasuaki Ozaki,Y. Kobayashi,Norikazu Ohshima,Keizo Kinoshita,T. Suzuki,Kiyokazu Nagahara,Nobuyuki Ishiwata,Katsumi Suemitsu,Shunsuke Fukami,Hiromitsu Hada,Tadahiko Sugibayashi,Naoki Kasai +19 more
TL;DR: The circuit schemes of a 32Mb MRAM are described, which enable 63% cell occupation ratio and 12ns access time, and a larger memory capacity and a higher cell-occupation ratio with small access-time degradation.
Patent
Magnetic random access memory
TL;DR: In this paper, the authors describe a memory cell with a free magnetic layer coupled anti-ferromagnetically through non-magnetic layers, which is provided at an intersection of the first and second wirings.