Current research into semiconductor clusters is focused on the properties of quantum dots-fragments of semiconductor consisting of hundreds to many thousands of atoms-with the bulk bonding geometry and with surface states eliminated by enclosure in a material that has a larger band gap. Quantum dots exhibit strongly size-dependent optical and electrical properties. The ability to join the dots into complex assemblies creates many opportunities for scientific discovery.

Semiconductor Clusters, Nanocrystals, and Quantum Dots

There are numerous potential applications for superconducting tapes based on YBa(2)Cu(3)O(7-x) (YBCO) films coated onto metallic substrates. A long-established goal of more than 15 years has been to understand the magnetic-flux pinning mechanisms that allow films to maintain high current densities out to high magnetic fields. In fact, films carry one to two orders of magnitude higher current densities than any other form of the material. For this reason, the idea of further improving pinning has received little attention. Now that commercialization of YBCO-tape conductors is much closer, an important goal for both better performance and lower fabrication costs is to achieve enhanced pinning in a practical way. In this work, we demonstrate a simple and industrially scaleable route that yields a 1.5-5-fold improvement in the in-magnetic-field current densities of conductors that are already of high quality.

Strongly enhanced current densities in superconducting coated conductors of YBa2Cu3O7-x + BaZrO3

This review describes bolometric detectors for infrared and millimeter waves. The introduction sketches the history of modern bolometers, indicates how they fit into the more general class of thermal detectors, and describes the types of applications for which they are the optimum solution. Section I is a tutorial introduction to the elementary theories of bolometer response, of thermal radiation, and of bolometer noise. Important results are derived from the laws of thermal physics in the simplest possible way. The more rigorous theories of bolometer response and noise that are required for quantitative understanding and optimization are then summarized. This material is intended to provide the background required by workers who wish to choose the appropriate bolometer technology for a given measurement, or to evaluate a novel technology. Section II, then describes the various components of an efficient bolometer and gives details of the fabrication and performance of modern bolometers. This discussion f...

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Bolometers for infrared and millimeter waves

We review experimental studies of the time decay of the nonequilibrium magnetization in high-temperature superconductors, a phenomenon known as magnetic relaxation. This effect has its origin in motion of flux lines out of their pinning sites due to thermal activation or quantum tunneling. The combination of relatively weak flux pinning and high temperatures leads to rich properties that are unconventional in the context of low temperature superconductivity and that have been the subject to intense studies. The results are assessed from a purely experimental perspective and discussed in the context of present phenomenological theories. [S0034-6861(96)00403-5]

Magnetic relaxation in high-temperature superconductors

The surface microstructures of c-axis-oriented films of YBa(2)Cu(3)O(7), deposited by off-axis magnetron sputtering on MgO and SrTiO(3) single crystal (100) substrates, have been investigated with scanning tunneling microscopy and atomic force microscopy. There is strong evidence that the films nucleate as islands and grow by adding material to the edge of a spirally rising step. This results in columnar grains, each of which contains a screw dislocation at its center. This microstructure may be of significance in determining superconducting properties such as critical current, and represents a significant difference between thin films (especially those grown in situ) and bulk materials.

http://science.sciencemag.org/content/sci/251/5001/1587.full.pdf

Growth Mechanism of Sputtered Films of YBa2Cu3O7 Studied by Scanning Tunneling Microscopy

A ferroelectric memory and its method of making in which a highly c-axis oriented layer (56) of ferroelectric lead zirconate titanate (PZT) is epitaxially deposited at between 640° and 710° C. upon a crystalline film (54) of yttrium barium copper oxide (YBCO), acting both as growth template and bottom electrode. A top electrode (58) is formed over the ferroelectric layer to complete the memory element. The two electrodes are preferably composed of the same perovskite conductor of the same cyrstalline orientation, most preferably, a-axis oriented YBCO. The structure can be grown on a silicon substrate (50) with an intermediate buffer layer (52) of yttria-stabilized zirconia. The ferroelectric behavior is optimized if the structure is cooled from its growth temperature at about 20° C./min. Such a-axis oriented perovskite thin films can be grown by continuously depositing the same or different perovskite material, but dividing the deposition into three temperature stages, a first at a temperature favoring a-axis oriented growth, a second gradually increasing the temperature to a temperature favoring c-axis growth, and a third at the c-axis growth temperature. Nonetheless, a high-quality a-axis oriented film is grown. The memory can be rejuvenated after it has become fatigued by applying a pulse of magnitude equal to that of the writing pulse but of considerably longer duration.

Crystallographically Aligned Ferroelectric Films Usable in Memories and Method of Crystallographically Aligning Perovskite Films

As‐deposited superconducting thin films (∼0.1 μm) of YBa2Cu3O7−x have been prepared by pulsed laser deposition on (100) Si with buffer layers of BaTiO3/MgAl2O4. X‐ray diffraction studies reveal that the films grow epitaxially with the c axis preferentially oriented normal to the substrate surface. This is confirmed by ion channeling measurements along the (100) (normal to the surface) and (110) directions of the Si substrate showing a minimum yield of 54% along the (100), and 78% along the (110) axes using 2.8 MeV He++. Preliminary transmission electron microscopy study also supports these results. The as‐deposited films have zero resistance temperatures of 86–87 K, and critical current densities of 6×104 A/cm2 at 77 K and 1.2×105 A/cm2 at 73 K. Our results indicate that the superconducting properties of the films are limited primarily by the quality and degree of epitaxal growth of the buffer layers on the silicon substrate.

High critical currents in epitaxial YBa2Cu3O7−x thin films on silicon with buffer layers

Superconducting thin films of Y1Ba2Cu3Ox with superconducting transition temperature (Tc) near 90 K have been prepared by a laser deposition technique. We show that films prepared on sapphire, lithium niobate, and strontium titanate under identical processing conditions exhibit different electrical characteristics. The film surfaces, interfaces, and crystallinity have been studied by a number of analytical techniques. We conclude that the substrate influences the film properties primarily in three ways: the thermal expansion mismatch introduces cracks in the film, the interface reaction changes the film composition, and the substrate lattice influences the crystallographic orientation of the film.

Substrate effects on the properties of Y‐Ba‐Cu‐O superconducting films prepared by laser deposition

For crystalline advanced materials, such as the high transition temperature oxide superconductors, the growth of defect‐free crystals is often the most sought after desideratum because it opens the doors to fundamental studies and the development of practical applications. We report the observation of YBa2Cu3O7−x(123) thin films having unprecedented structural perfection, at temperatures near 700 °C on [001] LaAlO3. The film’s c axis is in the surface plane, unlike films grown at higher temperatures. This orientation has important advantages for device applications and fundamental studies. The Tc,0 is only 70 K, presumably due to oxygen deficiency caused by thermal stresses; if so, it should be possible to raise the Tc,0 by relieving these stresses.

Structural perfection of Y‐Ba‐Cu‐O thin films controlled by the growth mechanism

Structural defects in thin films of nominal composition YBa2Cu3O7 (123) grown on single crystal MgO have been characterized. The main types of stacking defects correspond to the cationic stoichiometries of “248”, “247”, and “224”. Several types of edge dislocations have been observed. Due to the frequent changes in the stacking sequence, antiphase boundaries are created to accommodate the misfit across regions in which the repeat sequence is not identical. The films exhibit a mosaic microstructure due to the formation of grain boundaries in the a-b plane.

A. Inam

Papers

Crystallographically Aligned Ferroelectric Films Usable in Memories and Method of Crystallographically Aligning Perovskite Films

High critical currents in epitaxial YBa2Cu3O7−x thin films on silicon with buffer layers

Substrate effects on the properties of Y‐Ba‐Cu‐O superconducting films prepared by laser deposition

Structural perfection of Y‐Ba‐Cu‐O thin films controlled by the growth mechanism

Defect structure of laser deposited Y-Ba-Cu-O thin films on single crystal MgO substrate