S
Sara Paolillo
Researcher at Polytechnic University of Milan
Publications - 5
Citations - 794
Sara Paolillo is an academic researcher from Polytechnic University of Milan. The author has contributed to research in topics: Quantum Hall effect & Graphene. The author has an hindex of 2, co-authored 2 publications receiving 756 citations.
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Journal ArticleDOI
Towards a quantum resistance standard based on epitaxial graphene
Alexander Tzalenchuk,Samuel Lara-Avila,Alexei Kalaboukhov,Sara Paolillo,Mikael Syväjärvi,Rositza Yakimova,Olga Kazakova,Tjbm Janssen,Vladimir I. Fal'ko,Sergey Kubatkin +9 more
TL;DR: By demonstrating the structural integrity and uniformity of graphene over hundreds of micrometres, as well as reproducible mobility and carrier concentrations across a half-centimetre wafer, these results boost the prospects of using epitaxial graphene in applications beyond quantum metrology.
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SiC Graphene Suitable For Quantum Hall Resistance Metrology
Samuel Lara-Avila,Alexei Kalaboukhov,Sara Paolillo,Mikael Syväjärvi,Rositza Yakimova,Vladimir I. Fal'ko,Alexander Tzalenchuk,Sergey Kubatkin +7 more
TL;DR: In this article, the first observation of the quantum Hall effect in epitaxial graphene was reported, which filled the yawning gap in the understanding of the electronic properties of this truly remarkable material and demonstrate suitability of the silicon carbide technology for manufactiring large area high quality graphene.
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Evolution of lithography-to-etch bias in multi-patterning processes
Premkumar PanneerChelvam,Ankur Agarwal,Chad M. Huard,Alessandro Vaglio Pret,Antonio Mani,Roel Gronheid,Marc Demand,Kaushik A. Kumar,Sara Paolillo,Frederic Lazzarino +9 more
TL;DR: In this article , the authors present a model for a trilayer process in a back-end of the line manufacturing vehicle, which is calibrated and verified against top-down scanning electron microscope (SEM) and cross-sectional SEM measurements.
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Extreme contact shrink for back end of line connectivity
F. Schleicher,Sara Paolillo,Stefan Decoster,Chen Wu,Victor-H. Vega-Gonzalez,Mahmudul Hasan,Christophe Beral,Frederic Lazzarino +7 more
TL;DR: In this paper , the back end of line (BEOL) via shrink options is investigated, targeting the bottom critical dimension (CD) 10.5'nm in order to land on metal pitch 21'nm lines below, while maintaining low defectivity and low global and local CD uniformity.
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E-Test Validation of Space Error Budget and Metrology
Guillaume Schelcher,E. P. De Poortere,Nicola Kissoon,Sara Paolillo,Marsil de A. Costa e Silva,Y. Zhang,Cyrus E. Tabery,Johannes Catharinus Hubertus Mulkens,M. McManus,Philippe Leray,S. Halder +10 more
TL;DR: In this article , the electrical validation of a generalized space error model is reported by comparing inline e-beam "direct" space metrology measurements with an end-of-line, yield-based, space error metric.