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Satish C. Sharma

Researcher at Indian Institute of Technology Roorkee

Publications -  239
Citations -  4327

Satish C. Sharma is an academic researcher from Indian Institute of Technology Roorkee. The author has contributed to research in topics: Bearing (mechanical) & Reynolds equation. The author has an hindex of 30, co-authored 233 publications receiving 3639 citations. Previous affiliations of Satish C. Sharma include Indian Institutes of Technology.

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Journal ArticleDOI

Dynamic Analysis of Single Walled Boron Nitride Nanotube Reinforced Composite Based Nanomechanical Resonator

TL;DR: In this article, the Young's modulus of BNNT based composites are evaluated using a 3-D nanoscale representative volume element based on continuum mechanics and using the finite element method (FEM).
Journal ArticleDOI

Dynamic analysis of a 2-lobe geometrically imperfect journal bearing system:

TL;DR: In this article, the linear and nonlinear transient motion analysis of a 2-lobe geometrically imperfect hybrid journal bearing system compensated with constant flow valve restricher was performed.
Book ChapterDOI

Performance of Hydrodynamic Journal Bearing Operating with Shear-Thinning Lubricants

TL;DR: In this paper, a numerical simulation of hydrodynamic journal bearing operating with non-Newtonian lubricant is presented, where the cubic shear stress fluid model has been used to describe the shear-thinning of lubricant in bearing clearance space.
Journal ArticleDOI

Generation of Microwave Second Harmonic and Sum and Difference Frequency in Semiconductors at Low Temperatures

TL;DR: In this article, the authors investigated the generation of microwave second harmonic and sum and difference frequency when two microwaves of frequencies ω 1 and ω 2 are incident normally on a semiconducting slab in the presence of a d.c. field.
Journal ArticleDOI

Thermoelectric Effect of Hot Carriers in Semiconductors with Nonparabolic Energy Bands

TL;DR: In this paper, an analytical investigation of the thermoelectric effect of hot carriers in semiconductors with non-parabolic energy bands and spherical energy surfaces has been carried out.