S
Scott Sheppard
Researcher at Durham University
Publications - 26
Citations - 1758
Scott Sheppard is an academic researcher from Durham University. The author has contributed to research in topics: High-electron-mobility transistor & Gallium nitride. The author has an hindex of 8, co-authored 26 publications receiving 1663 citations. Previous affiliations of Scott Sheppard include Research Triangle Park.
Papers
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Journal ArticleDOI
30-W/mm GaN HEMTs by field plate optimization
Yifeng Wu,Adam William Saxler,Marcia Moore,R.P. Smith,Scott Sheppard,P. Chavarkar,T. Wisleder,Umesh K. Mishra,P. Parikh +8 more
TL;DR: In this article, a GaN high-electron-mobility-transistors (HEMTs) on SiC were fabricated with field plates of various dimensions for optimum performance, and an enhancement in radio frequency (RF) current-voltage swings was achieved with acceptable compromise in gain, through both reduction in the trapping effect and increase in breakdown voltages.
Journal ArticleDOI
High-power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substrates
Scott Sheppard,K. Doverspike,W.L. Pribble,Scott Allen,John W. Palmour,L.T. Kehias,T.J. Jenkins +6 more
TL;DR: In this paper, the performance of high-power GaN/Al/sub 0.86/N high-electron mobility transistors (HEMTs) fabricated on semi-insulating (SI) 4H-SiC substrates is reported.
Proceedings ArticleDOI
Linearity performance of GaN HEMTs with field plates
Yuan Wu,Adam William Saxler,T. Wisleder,Marcia Moore,R.P. Smith,Scott Sheppard,P. Chavarkar,P. Parikh +7 more
TL;DR: In this article, the linearity performance of GaN-channel HEMTs with various field plates lengths at biases up to 108V was evaluated at 2 GHz and 4 GHz.
Journal ArticleDOI
Improved 10-GHz Operation of GaN/AlGaN HEMTs on Silicon Carbide
Journal ArticleDOI
Recent Progress in SiC Microwave MESFETs
TL;DR: In this paper, a SiC MESFET with 48 mm of gate periphery was mounted in a hybrid circuit and achieved a maximum RF power of 80 watts CW at 3.1 GHz with 38% PAE.