Journal ArticleDOI
High-power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substrates
Scott Sheppard,K. Doverspike,W.L. Pribble,Scott Allen,John W. Palmour,L.T. Kehias,T.J. Jenkins +6 more
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TLDR
In this paper, the performance of high-power GaN/Al/sub 0.86/N high-electron mobility transistors (HEMTs) fabricated on semi-insulating (SI) 4H-SiC substrates is reported.Abstract:
Record performance of high-power GaN/Al/sub 0.14/-Ga/sub 0.86/N high-electron mobility transistors (HEMTs) fabricated on semi-insulating (SI) 4H-SiC substrates is reported. Devices of 0.125-0.25 mm gate periphery show high CW power densities between 5.3 and 6.9 W/mm, with a typical power-added efficiency (PAE) of 35.4% and an associated gain of 9.2 dB at 10 GHz. High-electron mobility transistors with 1.5-mm gate widths (12/spl times/125 /spl mu/m), measured on-wafer, exhibit a total output power of 3.9 W CW (2.6 W/mm) at 10 GHz with a PAE of 29% and an associated gain of 10 dB at the -2 dB compression point. A 3-mm HEMT, packaged with a hybrid matching circuit, demonstrated 9.1 W CW at 7.4 GHz with a PAE of 29.6% and a gain of 7.1 dB. These data represent the highest power density, total power, and associated gain demonstrated for a III-nitride HEMT under RF drive.read more
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Journal ArticleDOI
AlGaN/GaN HEMTs-an overview of device operation and applications
TL;DR: This paper attempts to present the status of the technology and the market with a view of highlighting both the progress and the remaining problems of the AlGaN/GaN high-electron mobility transistor.
Journal ArticleDOI
Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures
Oliver Ambacher,B. E. Foutz,Joseph A. Smart,James R. Shealy,Nils Weimann,K. Chu,M. J. Murphy,A. J. Sierakowski,William J. Schaff,L.F. Eastman,Roman Dimitrov,A. Mitchell,Martin Stutzmann +12 more
TL;DR: In this paper, a combination of high resolution x-ray diffraction, atomic force microscopy, Hall effect, and capacitance-voltage profiling measurements is used to calculate the polarization induced sheet charge bound at the AlGaN/GaN interfaces.
Journal ArticleDOI
Trapping effects and microwave power performance in AlGaN/GaN HEMTs
Steven C. Binari,K. Ikossi,J.A. Roussos,Walter Kruppa,Doewon Park,Harry B. Dietrich,Daniel D. Koleske,Alma Wickenden,R. L. Henry +8 more
TL;DR: In this article, the dc small-signal and microwave power output characteristics of AlGaN/GaN HEMTs are presented, and it is demonstrated that gate lag is related to surface trapping and drain current collapse is associated with the properties of the GaN buffer layer.
Journal ArticleDOI
Very-high power density AlGaN/GaN HEMTs
TL;DR: A flip-chip amplifier IC using a 4-mm device generated 14 W at 8 GHz, representing the highest CW power obtained from GaN-based integrated circuits to date.
Journal ArticleDOI
Graphene quilts for thermal management of high-power GaN transistors
TL;DR: It is shown that thermal management of GaN transistors can be substantially improved via introduction of alternative heat-escaping channels implemented with few-layer graphene-an excellent heat conductor, and that graphene quilts perform even better in GaN devices on sapphire substrates.
References
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Journal ArticleDOI
Piezoelectric charge densities in AlGaN/GaN HFETs
TL;DR: In this paper, the piezoelectric charge density at (0001) AlGaN/GaN interfaces is estimated for both MBE and MOCVD structures on sapphire and SiC substrate.
Journal ArticleDOI
High Al-content AlGaN/GaN MODFETs for ultrahigh performance
Yifeng Wu,Bernd Keller,Paul T. Fini,Sarah L. Keller,T. Jenkins,L. Kehias,S. P. DenBaars,Umesh Mishra +7 more
TL;DR: In this paper, the use of an AlGaN layer with high Al mole-fraction is proposed to increase the equivalent figures of merit of the Al-GaN/GaN MODFET structure.
Journal ArticleDOI
Self-heating in high-power AlGaN-GaN HFETs
TL;DR: In this article, the authors compare self-heating effects in AlGaN-GaN heterostructure field effect transistors (HFETs) grown on sapphire and SiC substrates.
Journal ArticleDOI
High-power 10-GHz operation of AlGaN HFET's on insulating SiC
TL;DR: In this paper, the first high-power RF characterization of AlGaN HFET's fabricated on electrically insulating SiC substrates was reported, and a record total power of 2.3 W at 10 GHz was measured from a 1280/spl mu/m wide HFET at V/sub ds/=33 V.
Journal ArticleDOI
Short-channel Al/sub 0.5/Ga/sub 0.5/N-GaN MODFETs with power density >3 W/mm at 18 GHz
Yuan Wu,Bernd Keller,Paul T. Fini,J. Pusl,M. Le,N.X. Nguyen,C. Nguyen,D. Widman,Sarah L. Keller,S. P. DenBaars,Umesh K. Mishra +10 more
TL;DR: In this article, the authors have demonstrated 0.25 /spl mu/m gate-length Al/sub 0.5/N/GaN MODFETs on sapphire substrates which exhibit CW output power densities >3 W/mm at 18 GHz, the highest reported to date for microwave FETs in the K band.