S
Sergei V. Kalinin
Researcher at Oak Ridge National Laboratory
Publications - 1069
Citations - 43341
Sergei V. Kalinin is an academic researcher from Oak Ridge National Laboratory. The author has contributed to research in topics: Ferroelectricity & Piezoresponse force microscopy. The author has an hindex of 95, co-authored 999 publications receiving 37022 citations. Previous affiliations of Sergei V. Kalinin include Southern Illinois University Carbondale & Louisiana State University.
Papers
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Graphene engineering by neon ion beams.
Vighter Iberi,Anton V. Ievlev,Ivan Vlassiouk,Stephen Jesse,Sergei V. Kalinin,David C. Joy,David C. Joy,Adam J. Rondinone,Alex Belianinov,Olga S. Ovchinnikova +9 more
TL;DR: The use of energetic Ne ions in engineering graphene nanostructures is discussed and their mechanical, electromechanical and chemical properties are explored using scanning probe microscopy (SPM) and SPM-based techniques.
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High-veracity functional imaging in scanning probe microscopy via Graph-Bootstrapping.
TL;DR: A graphical bootstrapping method to quantitatively visualize large-scale high-dimensional datasets and demonstrate its successes for high-veracity mechanical mapping on a mixed polymer thin film and resolving irregular hydration structure of calcite at atomic resolution is developed.
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Oxygen control of atomic structure and physical properties of SrRuO3 surfaces.
Alexander Tselev,Panchapakesan Ganesh,Liang Qiao,Wolter Siemons,Zheng Gai,Michael D. Biegalski,Arthur P. Baddorf,Sergei V. Kalinin +7 more
TL;DR: The ab initio modeling reveals that oxygen adatoms possess frustrated local spin moments with possible spin-glass behavior of the surface covered by adsorbed oxygen, and indicates presence of a pseudo gap on the topmost SrO layer on pristine SrO-terminated surface, suggesting possibility for realization of a surface half-metallic film.
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Understanding Electric Double-Layer Gating Based on Ionic Liquids: from Nanoscale to Macroscale.
Wei Zhao,Sheng Bi,Nina Balke,Philip D. Rack,Thomas Z. Ward,Sergei V. Kalinin,Sheng Dai,Guang Feng +7 more
TL;DR: Evaluating the gating performance of amorphous indium gallium zinc oxide (a-IGZO) transistor coupled with a series of imidazolium-based ILs reveals that the EDL with different ion structures could produce inhomogeneous electric fields at the solid-electrolyte interface, and the heterogeneity of electric field-induced charge distributions at semiconductor surface could reduce the electrical conductance of a-IGO during gating process.
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Quantitative Analysis of Electronic Properties of Carbon Nanotubes by Scanning Probe Microscopy: From Atomic to Mesoscopic Length Scales
TL;DR: It is shown that the local potential at a nanotube on a substrate due to a probe can be calculated quantitatively, allowing experimental data to be analyzed in terms of the electronic structure of defects.