S
Shengli Zhang
Researcher at Nanjing University of Science and Technology
Publications - 196
Citations - 13941
Shengli Zhang is an academic researcher from Nanjing University of Science and Technology. The author has contributed to research in topics: Band gap & Chemistry. The author has an hindex of 42, co-authored 150 publications receiving 9800 citations. Previous affiliations of Shengli Zhang include Nanjing University.
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Retraction of “Few-Layer Antimonene: Large Yield Synthesis, Exact Atomical Structure, and Outstanding Optical Limiting”
Chengxue Huo,Sun Xingming,Zhong Yan,Xiufeng Song,Shengli Zhang,Zheng Xie,Jizi Liu,Jianping Ji,Lianfu Jiang,Shuyun Zhou,Haibo Zeng +10 more
TL;DR: This work demonstrates that Group 15 2D materials beyond BP could be not only a new 2D crystal family with stability in ambient condition, but also of unique properties even better than graphene in the visible and near infrared region.
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Multilayer Cascade Charge Transport Layer for High-Performance Inverted Mesoscopic All-Inorganic and Hybrid Wide-Bandgap Perovskite Solar Cells
Yu Chen,Yu Chen,Weijian Tang,Yihui Wu,Ruihan Yuan,Jianchao Yang,Wenjuan Shan,Shengli Zhang,Wen-Hua Zhang +8 more
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Unusual Electronic Transitions in Two-dimensional Layered Sn Sb 2 Te 4 Driven by Electronic State Rehybridization
Wenhan Zhou,Shiying Guo,Shengli Zhang,Zhen Zhu,Shengyuan A. Yang,Mingxing Chen,Bo Cai,Hengze Qu,Haibo Zeng +8 more
TL;DR: In this article, the authors used density functional theory to study an ultrathick two-dimensional semiconductor, which is predicted to have high mobility and a large optical absorption coefficient.
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Pentagonal two-dimensional noble-metal dichalcogenide PdSSe for photocatalytic water splitting with pronounced optical absorption and ultrahigh anisotropic carrier mobility
TL;DR: In this paper, the authors explore the 2O phase noble-metal dichalcogenide (NMDC) material PdSSe using particle swarm optimization algorithms combined with first-principles calculations, and uncover three stable low-energy bulk phases, and also predict two polymorphs of the 2D monolayer exfoliated from the bulk phases.
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Ultrascaled Double-Gate Monolayer Sn S 2 MOSFETs for High-Performance and Low-Power Applications
Shiying Guo,Yangyang Wang,Xuemin Hu,Shengli Zhang,Hengze Qu,Wenhan Zhou,Zhenhua Wu,Xuhai Liu,Haibo Zeng +8 more
TL;DR: In this paper, the authors evaluate the electronic properties and device performance of ultrascaled 2D metal-oxide-semiconductor FETs via ab initio simulations, and demonstrate that monolayer is a favorable channel material for future competitive ultrasaled devices.