다중혈관 관상동맥 환자에서 y-문합을 이용하여 양쪽 내흉동맥만을 사용한 우회술의 조기 성적

Since the discovery of mechanically exfoliated graphene in 2004, research on ultrathin two-dimensional (2D) nanomaterials has grown exponentially in the fields of condensed matter physics, material science, chemistry, and nanotechnology. Highlighting their compelling physical, chemical, electronic, and optical properties, as well as their various potential applications, in this Review, we summarize the state-of-art progress on the ultrathin 2D nanomaterials with a particular emphasis on their recent advances. First, we introduce the unique advances on ultrathin 2D nanomaterials, followed by the description of their composition and crystal structures. The assortments of their synthetic methods are then summarized, including insights on their advantages and limitations, alongside some recommendations on suitable characterization techniques. We also discuss in detail the utilization of these ultrathin 2D nanomaterials for wide ranges of potential applications among the electronics/optoelectronics, electrocat...

Recent Advances in Ultrathin Two-Dimensional Nanomaterials

Metal halide perovskite materials are an emerging class of solution-processable semiconductors with considerable potential for use in optoelectronic devices1–3. For example, light-emitting diodes (LEDs) based on these materials could see application in flat-panel displays and solid-state lighting, owing to their potential to be made at low cost via facile solution processing, and could provide tunable colours and narrow emission line widths at high photoluminescence quantum yields4–8. However, the highest reported external quantum efficiencies of green- and red-light-emitting perovskite LEDs are around 14 per cent7,9 and 12 per cent8, respectively—still well behind the performance of organic LEDs10–12 and inorganic quantum dot LEDs13. Here we describe visible-light-emitting perovskite LEDs that surpass the quantum efficiency milestone of 20 per cent. This achievement stems from a new strategy for managing the compositional distribution in the device—an approach that simultaneously provides high luminescence and balanced charge injection. Specifically, we mixed a presynthesized CsPbBr3 perovskite with a MABr additive (where MA is CH3NH3), the differing solubilities of which yield sequential crystallization into a CsPbBr3/MABr quasi-core/shell structure. The MABr shell passivates the nonradiative defects that would otherwise be present in CsPbBr3 crystals, boosting the photoluminescence quantum efficiency, while the MABr capping layer enables balanced charge injection. The resulting 20.3 per cent external quantum efficiency represents a substantial step towards the practical application of perovskite LEDs in lighting and display. A strategy for managing the compositional distribution in metal halide perovskite light-emitting diodes enables them to surpass 20% external quantum efficiency—a step towards their practical application in lighting and displays.

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Perovskite light-emitting diodes with external quantum efficiency exceeding 20 per cent

The isolation of graphene in 2004 from graphite was a defining moment for the “birth” of a field: two-dimensional (2D) materials In recent years, there has been a rapidly increasing number of papers focusing on non-graphene layered materials, including transition-metal dichalcogenides (TMDs), because of the new properties and applications that emerge upon 2D confinement Here, we review significant recent advances and important new developments in 2D materials “beyond graphene” We provide insight into the theoretical modeling and understanding of the van der Waals (vdW) forces that hold together the 2D layers in bulk solids, as well as their excitonic properties and growth morphologies Additionally, we highlight recent breakthroughs in TMD synthesis and characterization and discuss the newest families of 2D materials, including monoelement 2D materials (ie, silicene, phosphorene, etc) and transition metal carbide- and carbon nitride-based MXenes We then discuss the doping and functionalization of 2

Recent Advances in Two-Dimensional Materials beyond Graphene

Recently, Kovalenko and co-workers and Li and co-workers developed CsPbX3 (X = Cl, Br, I) inorganic perovskite quantum dots (IPQDs), which exhibited ultrahigh photoluminescence (PL) quantum yields (QYs), low-threshold lasing, and multicolor electroluminescence. However, the usual synthesis needs high temperature, inert gas protection, and localized injection operation, which are severely against applications. Moreover, the so unexpectedly high QYs are very confusing. Here, for the first time, the IPQDs' room-temperature (RT) synthesis, superior PL, underlying origins and potentials in lighting and displays are reported. The synthesis is designed according to supersaturated recrystallization (SR), which is operated at RT, within few seconds, free from inert gas and injection operation. Although formed at RT, IPQDs' PLs have QYs of 80%, 95%, 70%, and FWHMs of 35, 20, and 18 nm for red, green, and blue emissions. As to the origins, the observed 40 meV exciton binding energy, halogen self-passivation effect, and CsPbX3@X quantum-well band alignment are proposed to guarantee the excitons generation and high-rate radiative recombination at RT. Moreover, such superior optical merits endow them with promising potentials in lighting and displays, which are primarily demonstrated by the white light-emitting diodes with tunable color temperature and wide color gamut.

CsPbX3 Quantum Dots for Lighting and Displays: Room-Temperature Synthesis, Photoluminescence Superiorities, Underlying Origins and White Light-Emitting Diodes

Motivated by the controversial bright exciton splittings in inorganic cesium lead halide perovskite nanocrystals, we studied excitation state of perovskite CsPbBr3 by four-band model Hamiltonian. W...

Optical-field induced SU(2) pair potential in caesium lead halide perovskites

2D materials are identified as Si alternatives for channels in next‐generation electronic devices. However, lack of high‐performance (HP) p‐type field‐effect transistors (FETs) acts as a block to the development of efficient complementary circuits. Here, p‐type monolayer GeC with planar structure is evaluated as a promising channel material to resolve the corresponding problems. The monolayer GeC possesses a direct bandgap of 2.07 eV with high hole mobility up to 6600 cm2 V–1 s–1. Coupling with ballistic quantum transport simulations, the results show that both n‐ and p‐FETs can hold the on‐currents exceeding 1200 µA µm–1 for HP devices. Particularly, for p‐type, the on‐currents with the channel shrinking from 10 to 3 nm can reach as high as 2991—1660 µA µm–1, which is of great value for the design of complementary circuits in 2D electronics. In addition, the figures of merits for GeC FETs, such as delay time, power dissipation, and energy‐delay product, are also assessed, fulfilling the demands of the International Technology Roadmap for Semiconductors (ITRS) and the International Roadmap for Devices and Systems (IRDS) for HP applications. Hence, this study demonstrates great potential of 2D GeC for future competitive electronic devices.

High‐Performance p‐type 2D FET Based on Monolayer GeC with High Hole Mobility: A DFT‐NEGF Study

Investigation on negative capacitance FinEFT beyond 7 nm node from device to circuit

Perovskite oxides as a 2D dielectric

We investigate theoretically the quantum transport properties of a twisted bilayer copper phthalocyanine (CuPc) molecular device, in which the bottom-layer CuPc molecule is connected to V-shaped zigzag-edged graphene nanoribbon electrodes. Based on a non-equilibrium Green's function approach in combination with density-functional theory, we find that the twist angle effectively modulates the electron interaction between the bilayer CuPc molecules. HOMO (highest occupied molecular orbital)–LUMO (lowest unoccupied molecular orbital) gap, spin filtering efficiency (SFE) and spin-dependent conductance of the bilayer CuPc molecular device could be modulated by changing the twist angle. The conductance reaches its maximum when the twist angle θ is 0° while the largest SFE is achieved when θ = 60°. The twist angle-induced exotic transport phenomena can be well explained by analyzing the transmission spectra, molecular energy level spectra and scattering states of the twisted bilayer CuPc molecular device. The tunable conductance, HOMO–LUMO gap and spin filtering versus twist angle are helpful for predicting how a two-molecule system may behave with twist angle.

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Shengli Zhang

Papers

Optical-field induced SU(2) pair potential in caesium lead halide perovskites

High‐Performance p‐type 2D FET Based on Monolayer GeC with High Hole Mobility: A DFT‐NEGF Study

Investigation on negative capacitance FinEFT beyond 7 nm node from device to circuit

Perovskite oxides as a 2D dielectric

Tunable conductance and spin filtering in twisted bilayer copper phthalocyanine molecular devices