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Shengli Zhang

Researcher at Nanjing University of Science and Technology

Publications -  196
Citations -  13941

Shengli Zhang is an academic researcher from Nanjing University of Science and Technology. The author has contributed to research in topics: Band gap & Chemistry. The author has an hindex of 42, co-authored 150 publications receiving 9800 citations. Previous affiliations of Shengli Zhang include Nanjing University.

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WS 2 saturable absorber for dissipative soliton mode locking at 1.06 and 1.55 µm

TL;DR: Simulations show that the bandgap of WS2 nanosheets decreases from 1.18 to 0.02 and 0.65 eV by introducing W and S defects respectively, which may contribute to the broadband saturable absorption property of the WS2.
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Few-Layer Antimonene: Anisotropic Expansion and Reversible Crystalline-Phase Evolution Enable Large-Capacity and Long-Life Na-Ion Batteries.

TL;DR: The sodiation/desodiation reaction mechanism of 2D few-layer antimonene (FLA) is proposed, showing that the FLA undergoes anisotropic volume expansion along the a/b plane and exhibits reversible crystalline phase evolution during cycling.
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Hydrogenated arsenenes as planar magnet and Dirac material

TL;DR: In this article, a planar magnet and 2D Dirac material based on first-principles calculations of arsenene and antimonene was reported. But the authors did not consider the effect of hydrogenation on the two-dimensional (2D) semiconductors.
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Lateral black phosphorene P–N junctions formed via chemical doping for high performance near-infrared photodetector

TL;DR: In this paper, benzyl viologen (BV) was used as an effective electron dopant to part of the area of a (p-type) few-layer BP flake and achieved an ambient stable, in-plane P-N junction.