S
Shengli Zhang
Researcher at Nanjing University of Science and Technology
Publications - 196
Citations - 13941
Shengli Zhang is an academic researcher from Nanjing University of Science and Technology. The author has contributed to research in topics: Band gap & Chemistry. The author has an hindex of 42, co-authored 150 publications receiving 9800 citations. Previous affiliations of Shengli Zhang include Nanjing University.
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Two-dimensional GeS with tunable electronic properties via external electric field and strain
Shengli Zhang,Ning Wang,Shangguo Liu,Shiping Huang,Wenhan Zhou,Bo Cai,Meiqiu Xie,Qun Yang,Xianping Chen,Haibo Zeng +9 more
TL;DR: The present results provide a simple and effective route to tune the electronic properties of GeS monolayer over a wide range and also facilitate the design ofGeS-based two-dimensional devices.
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Recent progress in 2D group IV-IV monochalcogenides: synthesis, properties and applications.
TL;DR: Recent research progress in theory and experiment is summarized, which studies the fundamental properties, applications and fabrication of 2D group IV-IV monochalcogenides and their new phases, and brings new perspectives and challenges for the future of this emerging field.
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Van der Waals bilayer antimonene: A promising thermophotovoltaic cell material with 31% energy conversion efficiency
TL;DR: In this article, a van der Waals (vdW) stacking strategy of antimonene for thermophotovoltaic (TPV) cells, which could achieve radiation-to-electricity efficiency as high as 31%, exceeding the traditional TPV materials such as Ge and GaSb.
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Tunable electronic properties of GeSe/phosphorene heterostructure from first-principles study
Weiyang Yu,Weiyang Yu,Zhili Zhu,Shengli Zhang,Xiaolin Cai,Xiaolin Cai,Xiangfu Wang,Chun-Yao Niu,Wei-Bing Zhang +8 more
TL;DR: In this paper, the structural and electronic properties of the GeSe/phosphorene van der Waals (vdW) p-n heterostructure were investigated and first principles calculations were employed to explore the structural properties.
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Two-dimensional SiP: an unexplored direct band-gap semiconductor
TL;DR: In this article, the structure, electronic properties, and stability of layered SiP monolayers were explored using first-principles calculations, and it was shown that SiP undergoes a transition from an indirect band gap to a direct band gap of 2.59 eV when thinned from bulk to monolayer.