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Shiuan-Huei Lin
Researcher at National Chiao Tung University
Publications - 144
Citations - 1597
Shiuan-Huei Lin is an academic researcher from National Chiao Tung University. The author has contributed to research in topics: Holography & Photorefractive effect. The author has an hindex of 21, co-authored 142 publications receiving 1400 citations. Previous affiliations of Shiuan-Huei Lin include National Cheng Kung University & Academia Sinica.
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Journal ArticleDOI
Phenanthrenequinone-doped poly(methyl methacrylate) photopolymer bulk for volume holographic data storage.
TL;DR: The design and fabrication of a phenanthrenequinone-doped poly(methyl methacrylate) photopolymer material was presented, and the material showed negligible shrinkage after optical exposures.
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Experimental characterization of phenanthrenequinone-doped poly(methyl methacrylate) photopolymer for volume holographic storage
TL;DR: In this article, the photopolymer poly (methyl methacrylate) doped with phenathrenequinone molecules was used for multiple storage of digital data pages in a polymer cube.
Journal ArticleDOI
Analyses on physical mechanism of holographic recording in phenanthrenequinone-doped poly(methyl methacrylate) hybrid materials
TL;DR: In this article, a mechanism for holographic recording in PQ/PMMA photopolymers is proposed, based on UV-VIS trans-mission and photoluminescence spectral measurements.
Journal ArticleDOI
Roadmap on holography
John T. Sheridan,Raymond K. Kostuk,Antonio Fimia Gil,Yongtian Wang,W. Lu,Haizheng Zhong,Yasuo Tomita,Cristian Neipp,Jorge Francés,Sergi Gallego,Inmaculada Pascual,Vera Marinova,Vera Marinova,Shiuan-Huei Lin,Ken-Yuh Hsu,F. Bruder,S. Hansen,C. Manecke,R. Meisenheimer,C. Rewitz,T. Rölle,Sergey B. Odinokov,Osamu Matoba,Manoj Kumar,Xiangyu Quan,Yasuhiro Awatsuji,Przemyslaw Wachulak,Alina V. Gorelaya,Alexander Sevryugin,Egor V. Shalymov,V. Yu. Venediktov,R. Chmelik,Maria Antonietta Ferrara,Giuseppe Coppola,Andrés Márquez,Augusto Beléndez,Weijian Yang,Rafael Yuste,Rafael Yuste,A. Bianco,Alessio Zanutta,C. Falldorf,John J. Healy,X. Fan,Bryan M. Hennelly,I. Zhurminsky,M. Schnieper,R. Ferrini,S. Fricke,Guohai Situ,Honggeng Wang,A. S. Abdurashitov,A. S. Abdurashitov,V. V. Tuchin,N. V. Petrov,Takanori Nomura,Derek R. Morim,Kalaichelvi Saravanamuttu +57 more
TL;DR: John T Sheridan, Raymond K Kostuk2, Antonio Fimia Gil, Y Wang4, W Lu4, H Zhong4, Y Tomita5, C Neipp6, J Francés6, S Gallego6, I Pascual6, V Marinova7,8, S-H Lin7, K-Y Hsu7, F Bruder9, S Hansen9, C Manecke9, R Meisenheimer
Journal ArticleDOI
A Novel Approach of Fabricating Germanium Nanocrystals for Nonvolatile Memory Application
TL;DR: In this paper, a nonvolatile memory device embedded with Ge nanocrystal dots is fabricated by the thermal oxidation of Si 0. 8 Ge 0. 2 combined with a rapid thermal annealing at 950°C in N 2 gas.