scispace - formally typeset
S

Shiuan-Huei Lin

Researcher at National Chiao Tung University

Publications -  144
Citations -  1597

Shiuan-Huei Lin is an academic researcher from National Chiao Tung University. The author has contributed to research in topics: Holography & Photorefractive effect. The author has an hindex of 21, co-authored 142 publications receiving 1400 citations. Previous affiliations of Shiuan-Huei Lin include National Cheng Kung University & Academia Sinica.

Papers
More filters
Journal ArticleDOI

Phenanthrenequinone-doped poly(methyl methacrylate) photopolymer bulk for volume holographic data storage.

TL;DR: The design and fabrication of a phenanthrenequinone-doped poly(methyl methacrylate) photopolymer material was presented, and the material showed negligible shrinkage after optical exposures.
Journal ArticleDOI

Experimental characterization of phenanthrenequinone-doped poly(methyl methacrylate) photopolymer for volume holographic storage

TL;DR: In this article, the photopolymer poly (methyl methacrylate) doped with phenathrenequinone molecules was used for multiple storage of digital data pages in a polymer cube.
Journal ArticleDOI

Analyses on physical mechanism of holographic recording in phenanthrenequinone-doped poly(methyl methacrylate) hybrid materials

TL;DR: In this article, a mechanism for holographic recording in PQ/PMMA photopolymers is proposed, based on UV-VIS trans-mission and photoluminescence spectral measurements.
Journal ArticleDOI

Roadmap on holography

John T. Sheridan, +57 more
- 07 Dec 2020 - 
TL;DR: John T Sheridan, Raymond K Kostuk2, Antonio Fimia Gil, Y Wang4, W Lu4, H Zhong4, Y Tomita5, C Neipp6, J Francés6, S Gallego6, I Pascual6, V Marinova7,8, S-H Lin7, K-Y Hsu7, F Bruder9, S Hansen9, C Manecke9, R Meisenheimer
Journal ArticleDOI

A Novel Approach of Fabricating Germanium Nanocrystals for Nonvolatile Memory Application

TL;DR: In this paper, a nonvolatile memory device embedded with Ge nanocrystal dots is fabricated by the thermal oxidation of Si 0. 8 Ge 0. 2 combined with a rapid thermal annealing at 950°C in N 2 gas.