S
Shyh-Jer Huang
Researcher at National Cheng Kung University
Publications - 35
Citations - 283
Shyh-Jer Huang is an academic researcher from National Cheng Kung University. The author has contributed to research in topics: Light-emitting diode & Epitaxy. The author has an hindex of 11, co-authored 35 publications receiving 243 citations. Previous affiliations of Shyh-Jer Huang include National Chiao Tung University & University of California, Los Angeles.
Papers
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Journal ArticleDOI
Atomic-Monolayer Two-Dimensional Lateral Quasi-Heterojunction Bipolar Transistors with Resonant Tunneling Phenomenon
Che Yu Lin,Xiaodan Zhu,Shin Hung Tsai,Shiao Po Tsai,Sidong Lei,Yumeng Shi,Lain-Jong Li,Shyh-Jer Huang,Wen Fa Wu,Wen-Kuan Yeh,Yan-Kuin Su,Yan-Kuin Su,Kang L. Wang,Yann Wen Lan +13 more
TL;DR: The experimental observation of quasi-heterojunction bipolar transistors utilizing a monolayer of the lateral WSe2-MoS2 junctions as the conducting p-n channel is demonstrated, and the negative differential resistance in the electrical characteristics is observed.
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Unipolar resistive switching in a transparent ITO/SiOx/ITO sandwich fabricated at room temperature
TL;DR: In this paper, a transparent indium tin oxide (ITO)/SiO x /ITO structure was fabricated at room temperature and its resistive switching behaviors were investigated, and the average optical transmittance of the structure in the visible region was about 84%.
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Efficiency enhancement in ultraviolet light-emitting diodes by manipulating polarization effect in electron blocking layer
TL;DR: In this paper, the electron blocking layers (EBLs) of the ultraviolet light-emitting diode (LED) with conventional and specifically designed EBLs are investigated numerically and experimentally.
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Achievement of normally-off AlGaN/GaN high-electron mobility transistor with p-NiOx capping layer by sputtering and post-annealing
Shyh-Jer Huang,Cheng-Wei Chou,Yan-Kuin Su,J. C. Lin,Hsin-Chieh Yu,De-Long Chen,Ruan Jian-Long +6 more
TL;DR: In this paper, the authors presented a technique to fabricate normally off GaN-based high-electron mobility transistor (HEMT) by sputtering and post-annealing p -NiO x capping layer.
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Influence of B2O3 Additive on Microwave Dielectric Properties of Li2ZnTi3O8 Ceramics for LTCC Applications
TL;DR: In this paper, the effect of B2O3 addition on the microwave dielectric properties and microstructure of Li2ZnTi3O8 ceramics prepared using conventional solid-state reaction was investigated for low-temperature co-fired ceramic (LTCC) applications.