Journal ArticleDOI
Unipolar resistive switching in a transparent ITO/SiOx/ITO sandwich fabricated at room temperature
TLDR
In this paper, a transparent indium tin oxide (ITO)/SiO x /ITO structure was fabricated at room temperature and its resistive switching behaviors were investigated, and the average optical transmittance of the structure in the visible region was about 84%.About:
This article is published in Solid State Communications.The article was published on 2013-04-01. It has received 22 citations till now. The article focuses on the topics: Indium tin oxide & Resistive random-access memory.read more
Citations
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Journal ArticleDOI
Bipolar resistive switching and charge transport in silicon oxide memristor
Alexey Mikhaylov,Alexey Belov,Davud V. Guseinov,Dmitry Korolev,Ivan Antonov,Denis V. Efimovykh,S. V. Tikhov,A. P. Kasatkin,O. N. Gorshkov,David Tetelbaum,A. I. Bobrov,Natalia V. Malekhonova,D. A. Pavlov,E.G. Gryaznov,Alexander P. Yatmanov +14 more
TL;DR: In this paper, the authors studied the performance of bipolar resistive switching in SiO x -based thin-film memristor structures deposited by magnetron sputtering technique on the TiN/Ti metalized SiO 2 /Si substrates and established that, after electroforming, the structure can be switched between the quasi-ohmic low-resistance state related to silicon chains (conducting filaments) and the high-resolution state with semiconductor-like hopping mechanism of charge transport through the defects in silicon oxide.
Journal ArticleDOI
Uniform resistive switching properties of fully transparent TiO2-based memory devices
TL;DR: In this article, the authors observed uniform resistive switching properties in fully transparent indium-tin-oxide (ITO)/TiO2 film/F-doped SnO2 (FTO) devices where the TiO2 films were fabricated by chemical solution deposition method.
Journal ArticleDOI
The x dependent two kinds of resistive switching behaviors in SiOx films with different x component
TL;DR: In this paper, the transition phenomenon of two kinds of different resistive switching behaviors in SiOx based Pt/SiOx/Pt devices with different x component was discovered and they used the silicon dangling bonds (Si-DBs) percolation model to explain the x dependent transition phenomenon.
Journal ArticleDOI
Bio-inspired synaptic functions from a transparent zinc-tin-oxide-based memristor for neuromorphic engineering
TL;DR: In this article, ITO/ZTO/ITO transparent resistive memory was fabricated using a fully industrialized sputtering process and the optical transmittance was over 70% for all wavelengths in the visible region.
Journal ArticleDOI
Room-temperature fabricated, fully transparent resistive memory based on ITO/CeO2/ITO structure for RRAM applications
Muhammad Ismail,Muhammad Ismail,Anwar Manzoor Rana,Ijaz Talib,T. M. Tsai,Umesh Chand,Ejaz Ahmed,M.Y. Nadeem,Abdul Aziz,Nazar Abbas Shah,Muhammad Hussain +10 more
TL;DR: Fully transparent resistive random access memory (TRRAM) device based on CeO2 as active layer using indium-tinoxide (ITO) electrodes was fabricated on glass substrate.
References
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Journal ArticleDOI
Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering
TL;DR: In this paper, the authors fabricated ZnO thin-film transistors by rf magnetron sputtering on Si substrates held near room temperature, and the best devices had field effect mobility of more than 2 cm2/V and an on/off ratio>106.
Journal ArticleDOI
Self-Accelerated Thermal Dissolution Model for Reset Programming in Unipolar Resistive-Switching Memory (RRAM) Devices
TL;DR: In this paper, the numerical modeling of reset programming in NiO-based resistive-switching memory is addressed, and it is shown that reset transition is self-accelerated as a consequence of a positive feedback between the thermal dissolution of the conductive filament and local Joule heating in the CF bottleneck.
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Bipolar and Unipolar Resistive Switching in Cu-Doped $ \hbox{SiO}_{2}$
TL;DR: In this paper, the authors describe the characteristics of W-(Cu/SiO2)-Cu programmable metallization cell (PMC) devices formed by the thermal diffusion of Cu into deposited SiO2.