S
Simon M. Sze
Researcher at National Sun Yat-sen University
Publications - 21
Citations - 557
Simon M. Sze is an academic researcher from National Sun Yat-sen University. The author has contributed to research in topics: Resistive random-access memory & Non-volatile memory. The author has an hindex of 13, co-authored 21 publications receiving 501 citations. Previous affiliations of Simon M. Sze include National Chiao Tung University & National Cheng Kung University.
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Journal ArticleDOI
Characteristics and Mechanisms of Silicon-Oxide-Based Resistance Random Access Memory
Kuan-Chang Chang,Tsung-Ming Tsai,Ting-Chang Chang,Hsing-Hua Wu,Jung-Hui Chen,Yong-En Syu,Geng-Wei Chang,Tian-Jian Chu,Guan-Ru Liu,Yu-Ting Su,Min-Chen Chen,Jhih-Hong Pan,Jian-Yu Chen,Cheng-Wei Tung,Hui-Chun Huang,Ya-Hsiang Tai,Dershin Gan,Simon M. Sze +17 more
TL;DR: In this article, the current-voltage fitting data show that current transport mechanism is governed by Poole-Frenkel behavior in high-resistance state and Ohm's law in low-Resistance state, consisting with filament theory.
Journal ArticleDOI
Charge Quantity Influence on Resistance Switching Characteristic During Forming Process
Tian-Jian Chu,Ting-Chang Chang,Tsung-Ming Tsai,Hsing-Hua Wu,Jung-Hui Chen,Kuan-Chang Chang,Tai-Fa Young,Kai-Hsang Chen,Yong-En Syu,Geng-Wei Chang,Yao-Feng Chang,Min-Chen Chen,J. C. Lou,Jhih-Hong Pan,Jian-Yu Chen,Ya-Hsiang Tai,Cong Ye,Hao Wang,Simon M. Sze +18 more
TL;DR: In this article, the authors presented that the quantity of charge through the switching layer has been proven as the key element in the formation of the conduction path and proved that the charge quantity is the critical factor for forming process.
Journal ArticleDOI
Origin of Hopping Conduction in Graphene-Oxide-Doped Silicon Oxide Resistance Random Access Memory Devices
Kuan-Chang Chang,Rui Zhang,Ting-Chang Chang,Tsung-Ming Tsai,Jen-Chung Lou,Jung-Hui Chen,Tai-Fa Young,Min-Chen Chen,Ya-Liang Yang,Yin-Chih Pan,Geng-Wei Chang,Tian-Jian Chu,Chih-Cheng Shih,Jian-Yu Chen,Chih-Hung Pan,Yu-Ting Su,Yong-En Syu,Ya-Hsiang Tai,Simon M. Sze +18 more
TL;DR: In this article, a double-active-layer resistive switching memory device with a high on/off resistance ratio and small working current (0.02 mA) is presented, which is attributed to the existence of graphene oxide flakes formed during the sputter process.
Journal ArticleDOI
Resistive Switching Modification by Ultraviolet Illumination in Transparent Electrode Resistive Random Access Memory
Chih-Cheng Shih,Kuan-Chang Chang,Ting-Chang Chang,Tsung-Ming Tsai,Rui Zhang,Jung-Hui Chen,Kai-Huang Chen,Tai-Fa Young,Hsin-Lu Chen,Jen-Chung Lou,Tian-Jian Chu,Syuan-Yong Huang,Ding-Hua Bao,Simon M. Sze +13 more
TL;DR: In this article, the authors investigated the photoensitivity to ultraviolet (UV) light for zinc oxide (ZnO) resistance random access memory (RRAM) with transparent electrode and characterized its resistive switching properties.
Journal ArticleDOI
Origin of Hopping Conduction in Sn-Doped Silicon Oxide RRAM With Supercritical $\hbox{CO}_{2}$ Fluid Treatment
Tsung-Ming Tsai,Kuan-Chang Chang,Ting-Chang Chang,Geng-Wei Chang,Yong-En Syu,Yu-Ting Su,Guan-Ru Liu,Kuo-Hsiao Liao,Min-Chen Chen,Hui-Chun Huang,Ya-Hsiang Tai,Dershin Gan,Cong Ye,Hao Wang,Simon M. Sze +14 more
TL;DR: In this article, the authors investigated the origin of hopping conduction in the low-resistance state (LRS) of a resistive random access memory device with supercritical CO2 fluid treatment, and the dangling bonds of a tin-doped silicon oxide ( Sn:SiOx) thin film were cross linked by the hydration-dehydration reaction through supercritical fluid technology.