Cong Ye

TL;DR: In this article, a TiN/HfO2/ITO memory device is fabricated, which shows stable bipolar resistive switching behavior, as well as excellent data retention and good endurance.

TL;DR: In this article, the authors presented that the quantity of charge through the switching layer has been proven as the key element in the formation of the conduction path and proved that the charge quantity is the critical factor for forming process.

TL;DR: In this article, the authors successfully produced resistive switching behaviors by nickel doped into silicon oxide at room temperature, which is a useful dielectric material in integrated circuit (IC) industries by cosputtering technology.

TL;DR: In this article, the authors investigated the origin of hopping conduction in the low-resistance state (LRS) of a resistive random access memory device with supercritical CO2 fluid treatment, and the dangling bonds of a tin-doped silicon oxide ( Sn:SiOx) thin film were cross linked by the hydration-dehydration reaction through supercritical fluid technology.

TL;DR: The role of nitrogen doping on the resistive switching performance in nitrogen doped ZrO2 memristive device is investigated in this paper, where the authors theoretically calculate the formation energy (Evf), migration energy (Em), and density of states for oxygen vacancy (VO).