S
Souheil Bensmida
Researcher at University of Bristol
Publications - 50
Citations - 546
Souheil Bensmida is an academic researcher from University of Bristol. The author has contributed to research in topics: Amplifier & RF power amplifier. The author has an hindex of 12, co-authored 50 publications receiving 508 citations. Previous affiliations of Souheil Bensmida include University of Calgary.
Papers
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Journal ArticleDOI
Concurrent Dual-Band Class-F Load Coupling Network for Applications at 1.7 and 2.14 GHz
TL;DR: The design of a multiharmonic dual-band Class-F power amplifier for applications at wireless communication frequencies based on a switchless multih armonic multiband load coupling network topology is reported.
Journal ArticleDOI
Multichannel and Wideband Power Amplifier Design Methodology for 4G Communication Systems Based on Hybrid Class-J Operation
TL;DR: A methodology for the design of multichannel, wideband, highly efficient hybrid Class-J power amplifiers for fourth-generation (4G) communication transmitters is proposed, based on the automatic generation and evaluation of a vast number of output matching networks of the same topology but different dimensions.
Journal ArticleDOI
A Digital Predistortion System with Extended Correction Bandwidth with Application to LTE- A Nonlinear Power Amplifiers
Oualid Hammi,Andrew K. C. Kwan,Andrew K. C. Kwan,Souheil Bensmida,Kevin A. Morris,Fadhel M. Ghannouchi,Fadhel M. Ghannouchi +6 more
TL;DR: This article presents a bandwidth extended digital predistortion system suitable for LTE-advanced applications that uses a two-box architecture based on the cascade of a memory polynomial followed by a memoryless predistORT function.
Proceedings Article
The effect of baseband impedance termination on the linearity of GaN HEMTs
M. Akmal,Jonathan Lees,Souheil Bensmida,S. Woodington,V. Carrubba,Steve C. Cripps,Johannes Benedikt,Kevin A. Morris,Mark A Beach,JP McGeehan,Paul J. Tasker +10 more
TL;DR: In this paper, the effect of baseband impedance termination on the linearity performance of a 10W GaN HEMT device driven to deliver a peak envelope power of approximately 40dBm was demonstrated.
Journal ArticleDOI
Controlling Active Load–Pull in a Dual-Input Inverse Load Modulated Doherty Architecture
T. M. Hone,Souheil Bensmida,Kevin A. Morris,Mark A Beach,JP McGeehan,Jonathan Lees,Johannes Benedikt,Paul J. Tasker +7 more
TL;DR: In this paper, a dual-input inverse load modulated Doherty amplifier is presented where the peaking stage delivers 10 dB less of maximum output power than the carrier, while still maintaining Doherty behavior.