S
Stéphane Fusil
Researcher at Université Paris-Saclay
Publications - 113
Citations - 13294
Stéphane Fusil is an academic researcher from Université Paris-Saclay. The author has contributed to research in topics: Ferroelectricity & Multiferroics. The author has an hindex of 47, co-authored 106 publications receiving 11647 citations. Previous affiliations of Stéphane Fusil include University of Paris & Centre national de la recherche scientifique.
Papers
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Journal ArticleDOI
Control of the Cation Stoichiometry in the Multiferroic BiFeO3 Thin Films
M. S. Kartavtseva,M. S. Kartavtseva,O. Yu. Gorbenko,Andrey R. Kaul,Stéphane Fusil,Alain Barthélémy,Karim Bouzehouane +6 more
TL;DR: The epitaxial BiFeO3 films on different substrates were prepared by metal organic chemical vapor deposition (MOCVD) and the ferroelectric properties of the films were controlled by Piezoresponse Force as discussed by the authors.
Journal ArticleDOI
Patterning enhanced tetragonality in BiFeO3 thin films with effective negative pressure by helium implantation
Constance Toulouse,J. Fischer,S. Farokhipoor,Lluís Yedra,F. Carla,Amélie Jarnac,E. Elkaim,Pierre Fertey,Jean-Nicolas Audinot,Tom Wirtz,Beatriz Noheda,Vincent Garcia,Stéphane Fusil,I. Peral Alonso,Mael Guennou,Jens Kreisel +15 more
TL;DR: In this paper, the authors present a study of bismuth ferrite (BiFeO3) films where strain was patterned locally by helium implantation and show that the implantation causes an elongation of the BiFeO 3 unit cell and ultimately a transition towards the so-called super-tetragonal polymorph via states with mixed phases.
Patent
Method of implementing a ferroelectric tunnel junction, device comprising a ferroelectric tunnel junction and use of such a device
TL;DR: In this article, a method of implementing a ferroelectric tunnel junction is described, which consists of films each forming an electrode-type conductive element, and separated by a film forming a Ferroelectric element acting as the tunnel barrier.
Journal ArticleDOI
Anisotropic magneto-Coulomb effect versus spin accumulation in a ferromagnetic single-electron device
Anne Bernand-Mantel,Pierre Seneor,Karim Bouzehouane,Stéphane Fusil,Cyrile Deranlot,Frédéric Petroff,Albert Fert +6 more
TL;DR: In this paper, the magnetotransport characteristics of nanospintronics single-electron devices are investigated, and the authors attribute the observed magnetoresistance to either spin accumulation or anisotropic magneto-Coulomb effect, two effects with very different origins.
Journal ArticleDOI
Publisher Correction: Giant topological Hall effect in correlated oxide thin films
Lorenzo Vistoli,Wenbo Wang,Anke Sander,Qiuxiang Zhu,Blai Casals,Rafael Cichelero,Agnès Barthélémy,Stéphane Fusil,Gervasi Herranz,Sergio Valencia,Radu Abrudan,Eugen Weschke,Kazuki Nakazawa,Kazuki Nakazawa,Hiroshi Kohno,Jacobo Santamaria,Weida Wu,Vincent Garcia,Manuel Bibes +18 more
TL;DR: In the version of this Letter originally published, Hiroshi Kohno's affiliation was incorrectly listed as Department of Earth and Space Science, Graduate School of Science, Osaka University, Osaka, Japan; it should have been Department of Physics, Nagoya University, Nishi, Japan as mentioned in this paper.