G
Gervasi Herranz
Researcher at Institute of Cost and Management Accountants of Bangladesh
Publications - 131
Citations - 4936
Gervasi Herranz is an academic researcher from Institute of Cost and Management Accountants of Bangladesh. The author has contributed to research in topics: Thin film & Magnetoresistance. The author has an hindex of 30, co-authored 125 publications receiving 4320 citations. Previous affiliations of Gervasi Herranz include Spanish National Research Council & Autonomous University of Barcelona.
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Journal ArticleDOI
Two-dimensional electron gas with universal subbands at the surface of SrTiO3
Andrés F. Santander-Syro,Andrés F. Santander-Syro,O. Copie,O. Copie,O. Copie,Takeshi Kondo,Franck Fortuna,Stéphane Pailhès,Ruben Weht,X. G. Qiu,François Bertran,A. Nicolaou,Amina Taleb-Ibrahimi,P. Le Fèvre,Gervasi Herranz,Manuel Bibes,Manuel Bibes,Nicolas Reyren,Nicolas Reyren,Y. Apertet,Philippe Lecoeur,Agnès Barthélémy,Agnès Barthélémy,Marcelo J. Rozenberg +23 more
TL;DR: It is shown, using angle-resolved photoemission spectroscopy, that there is a highly metallic universal 2DEG at the vacuum-cleaved surface of SrTiO3 (including the non-doped insulating material) independently of bulk carrier densities over more than seven decades.
Journal ArticleDOI
High Mobility in LaAlO 3 / SrTiO 3 Heterostructures: Origin, Dimensionality, and Perspectives
Gervasi Herranz,Mario Basletić,Mario Basletić,Manuel Bibes,C. Carrétéro,Emil Tafra,Eric Jacquet,Karim Bouzehouane,Cyrile Deranlot,Amir Hamzić,Jean-Marc Broto,Alain Barthélémy,Albert Fert +12 more
TL;DR: Experimental data strongly support an interpretation of these properties based on the creation of oxygen vacancies in the SrTiO3 substrates during the growth of the LaAlO3 layer, which opens interesting prospects for all-oxide electronics.
Journal ArticleDOI
Mapping the spatial distribution of charge carriers in LaAlO3/SrTiO3 heterostructures
Mario Basletić,Jean-Luc Maurice,C. Carrétéro,Gervasi Herranz,O. Copie,Manuel Bibes,Eric Jacquet,Karim Bouzehouane,Stéphane Fusil,Alain Barthélémy +9 more
TL;DR: It is found that, depending on specific growth protocols, the spatial extension of the high-mobility electron gas can be varied from hundreds of micrometres into SrTiO(3) to a few nanometres next to the LaAlO( 3)/SrTiO (3) interface.
Journal ArticleDOI
Surface symmetry-breaking and strain effects on orbital occupancy in transition metal perovskite epitaxial films
David Pesquera,Gervasi Herranz,Alessandro Barla,Eric Pellegrin,Federica Bondino,Elena Magnano,Florencio Sánchez,Josep Fontcuberta +7 more
TL;DR: It is shown that it can be combined with substrate-induced epitaxial strain to tailor at will the electron occupancy of in-plane and out-of-plane surface electronic orbitals, opening the possibility of an active tuning of surface electronic and magnetic properties as well as chemical properties.
Journal ArticleDOI
Towards Oxide Electronics: a Roadmap
Mariona Coll,Josep Fontcuberta,Matthias Althammer,Manuel Bibes,Hans Boschker,Albert Calleja,Guanglei Cheng,Guanglei Cheng,Mario Cuoco,Regina Dittmann,Brahim Dkhil,I. El Baggari,Marco Fanciulli,Ignasi Fina,Elvira Fortunato,Carlos Frontera,Sz. Fujita,Vincent Garcia,Sebastian T. B. Goennenwein,Claes-Göran Granqvist,Julie Grollier,Rudolf Gross,Rudolf Gross,A. Hagfeldt,Gervasi Herranz,Kazuhiro Hono,Evert Pieter Houwman,Mark Huijben,Alexei Kalaboukhov,David J. Keeble,Gertjan Koster,Lena F. Kourkoutis,Jeremy Levy,M. Lira-Cantu,Judith L. MacManus-Driscoll,Jochen Mannhart,Rodrigo Martins,Stephan Menzel,Thomas Mikolajick,Mari Napari,Minh D. Nguyen,Gunnar A. Niklasson,Charles Paillard,Shrabani Panigrahi,Guus Rijnders,Florencio Sánchez,Pablo Sanchis,Simone Sanna,Darrell G. Schlom,Uwe Schroeder,Kyle Shen,Anne Siemon,M. Spreitzer,Hiroaki Sukegawa,R. Tamayo,J. van den Brink,Nini Pryds,F. Miletto Granozio +57 more
TL;DR: The Towards Oxide-Based Electronics (TO-BE) Action as mentioned in this paper has been recently running in Europe and has involved as participants several hundred scientists from 29 EU countries in a wide four-year project.