S
Sun Jung Kim
Researcher at National University of Singapore
Publications - 22
Citations - 570
Sun Jung Kim is an academic researcher from National University of Singapore. The author has contributed to research in topics: Capacitance & Capacitor. The author has an hindex of 13, co-authored 22 publications receiving 554 citations.
Papers
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Journal ArticleDOI
Improvement of voltage linearity in high-/spl kappa/ MIM capacitors using HfO/sub 2/-SiO/sub 2/ stacked dielectric
Sun Jung Kim,Byung Jin Cho,Ming-Fu Li,Shi-Jin Ding,Chunxiang Zhu,M. B. Yu,B. Narayanan,Albert Chin,Dim-Lee Kwong +8 more
TL;DR: In this article, the voltage coefficients of capacitance (VCC) in high/spl kappa/ metal-insulator-metal (MIM) capacitors can be actively engineered and voltage linearity can be significantly improved maintaining high capacitance density.
Journal ArticleDOI
RF, DC, and reliability characteristics of ALD HfO/sub 2/-Al/sub 2/O/sub 3/ laminate MIM capacitors for Si RF IC applications
Shi-Jin Ding,Hang Hu,Chunxiang Zhu,Sun Jung Kim,Xiongfei Yu,Ming-Fu Li,Byung Jin Cho,D.S.H. Chan,Mingbin Yu,S.C. Rustagi,Albert Chin,Dim-Lee Kwong +11 more
TL;DR: In this article, high-performance metal-insulator-metal capacitors using atomic layer-deposited HfO/sub 2/-Al/Sub 2/O/Sub 3/ laminate are fabricated and characterized for RF and mixed-signal applications.
Journal ArticleDOI
PVD HfO 2 for high-precision MIM capacitor applications
TL;DR: In this article, metal-insulator-metal (MIM) capacitors are fabricated using sputtered HfO/sub 2/ with Ta and TaN for top and bottom electrodes, respectively.
Journal ArticleDOI
High-performance MIM capacitor using ALD high-k HfO 2 -Al 2 O 3 laminate dielectrics
Shi-Jin Ding,Hang Hu,H.F. Lim,Sun Jung Kim,Xiongfei Yu,Chunxiang Zhu,M.F. Li,M.F. Li,Byung Jin Cho,D.S.H. Chan,S.C. Rustagi,Mingbin Yu,Albert Chin,Dim-Lee Kwong +13 more
TL;DR: In this article, the authors successfully fabricated and demonstrated high performance metal-insulator-metal (MIM) capacitors with HfO/sub 2/-Al/sub sub 2/Al sub 2 O/sub 3/O sub 3/ laminate dielectric using atomic layer deposition (ALD) technique.
Journal ArticleDOI
Formation of Ge nanocrystals in HfAlO high-k dielectric and application in memory device
Ying Qian Wang,J.H. Chen,Won Jong Yoo,Yee-Chia Yeo,Sun Jung Kim,Rohit Gupta,Zerlinda Y. L. Tan,Dim-Lee Kwong,A. Y. Du,N. Balasubramanian +9 more
TL;DR: In this paper, the formation of Ge nanocrystals embedded in HfAlO high-k dielectric by co-sputtering of HfO2, Al2O3, and Ge, followed by rapid thermal annealing was demonstrated.