S
Sung-min Kim
Researcher at Samsung
Publications - 138
Citations - 2861
Sung-min Kim is an academic researcher from Samsung. The author has contributed to research in topics: Transistor & Layer (electronics). The author has an hindex of 28, co-authored 133 publications receiving 2759 citations. Previous affiliations of Sung-min Kim include Sungkyunkwan University & Samsung Medical Center.
Papers
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Journal ArticleDOI
High-Performance Twin Silicon Nanowire MOSFET (TSNWFET) on Bulk Si Wafer
Sung Dae Suk,Kyoung Hwan Yeo,Keun Hwi Cho,Ming Li,Yun Young Yeoh,Sung-young Lee,Sung-min Kim,Eun Jung Yoon,Min Sang Kim,Chang Woo Oh,Sung Hwan Kim,Dong-Won Kim,Dong-gun Park +12 more
TL;DR: A gate-all-around (GAA) twin silicon nanowire MOSFET (TSNWFET) with 5-nm-radius channels on a bulk Si wafer is successfully fabricated to achieve extremely high-drive currents of 2.37 mA/m for n-channel and 1.30 mA /m for p-channel TSNWFETs with mid-gap TiN metal gate.
Patent
Gate-all-around type of semiconductor device and method of fabricating the same
TL;DR: A gate-all-around (GAA) transistor device has a pair of pillars that include the source and drain regions, a channel region bridging the source/drain regions, and a gate electrode and gate oxide which surround the channel region.
Patent
Semiconductor device including a multi-channel fin field effect transistor including protruding active portions and method of fabricating the same
TL;DR: In this paper, the authors describe a semiconductor device with a cell region and a peripheral circuit region, a gate electrode formed over the gate dielectric layer, and a source/drain region formed in the active region of the semiconductor substrate on either side of the gate electrode.
Proceedings ArticleDOI
80 nm 512M DRAM with enhanced data retention time using partially-insulated cell array transistor (PiCAT)
Kyoung Hwan Yeo,Chang Woo Oh,Sung-min Kim,Min-Sang Kim,Chang-Sub Lee,Sung-young Lee,Ming Li,Hye-Jin Cho,Eun-Jung Yoon,Sung Hwan Kim,Jeong-Dong Choe,Dong-Won Kim,Donggun Park,Kinam Kim +13 more
TL;DR: In this paper, an 80 nm 512M DDR DRAM with partially-insulated cell array transistor (PiCAT) was fabricated, where Si/SiGe epitaxial growth and selective SiGe etch process were used to form PiOX (Partially-Insulating OXide) under source and drain of the cell transistor.
Journal ArticleDOI
Clinical relevance of vascular endothelial growth factor (VEGFA) and VEGF receptor (VEGFR2) gene polymorphism on the treatment outcome following imatinib therapy
D.H. Kim,D.H. Kim,Wei Xu,Suzanne Kamel-Reid,Xiangdong Liu,Chul Won Jung,Sung-min Kim,Jeffrey H. Lipton +7 more
TL;DR: The VEGFR2 gene polymorphism correlates with cytogenetic response, treatment failure following imatinib therapy for CML, while VEGFA genotype correlates with progression to advanced disease.