S
Sung-min Kim
Researcher at Samsung
Publications - 138
Citations - 2861
Sung-min Kim is an academic researcher from Samsung. The author has contributed to research in topics: Transistor & Layer (electronics). The author has an hindex of 28, co-authored 133 publications receiving 2759 citations. Previous affiliations of Sung-min Kim include Sungkyunkwan University & Samsung Medical Center.
Papers
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Journal ArticleDOI
Comparative Effectiveness of Palliative Chemotherapy Versus Neoadjuvant Chemotherapy Followed by Radical Cystectomy Versus Cystectomy Followed by Adjuvant Chemotherapy Versus Cystectomy for Regional Node-Positive Bladder Cancer: A Retrospective Analysis: KCSG GU 17-03
Woo Kyun Bae,Hyo Jin Lee,Se Hoon Park,Jung Hoon Kim,Hee Jun Kim,Chi Hoon Maeng,Inkeun Park,Byeong Seok Sohn,Jung A. Kim,Kyung Hee Lee,Do Hyoung Lim,Hyun Chang,Sung-min Kim,Ho Young Kim,Hunho Song,Seungtaek Lim,Jae Ho Byun,Hyun Ae Jung +17 more
TL;DR: This study represents an advancement in understanding the impact of clinical treatment patterns of lymph node‐positive bladder cancer through comparison of survival data of patients treated with different therapeutic strategies, and results in better outcomes than did single treatments.
Journal ArticleDOI
Continuation of gefitinib beyond progression in patients with EGFR mutation-positive non-small-cell lung cancer: A phase II single-arm trial.
Sung Won Lim,Sehhoon Park,Youjin Kim,Jang Ho Cho,Song Ee Park,Hansang Lee,Hee Kyung Kim,Sung-min Kim,Jong Mu Sun,Se-Hoon Lee,Jin Seok Ahn,Keunchil Park,Myung-Ju Ahn +12 more
TL;DR: In patients with EGFR-mutant NSCLC who experience progression, it is beneficial to maintain gefitinib treatment with local treatment such as radiotherapy until symptomatic progression, however, in patients with pleural metastasis or effusion, continuation of gef itinib beyond progression should be carefully determined on a case by case basis.
Patent
Semiconductor device comprising multichannel fin field-effect transistor and method of manufacturing the same
Yotetsu Go,Se-Myeong Jang,Keunnam Kim,Sung-min Kim,Dong-gun Park,Eun-Jung Yun,容哲 呉,恩貞 尹,世明 張,東健 朴,根楠 金 +10 more
TL;DR: In this article, the authors proposed a method to provide a semiconductor device and the method of manufacturing the same solution by using an element isolation film, a gate oxide film, and a gate electrode formed on the active region of the semiconductor substrate.
Proceedings ArticleDOI
Fully working high performance multi-channel field effect transistor (McFET) SRAM cell on bulk Si substrate using TiN single metal gate
Sung-min Kim,Eun Jung Yoon,Min Sang Kim,Chang Woo Oh,Sung Dae Suk,Ming Li,Sung-young Lee,Kyoung Hwan Yeo,Sung Hwan Kim,Dong Uk Choe,Dong-Won Kim,Donggun Park,Kinam Kim,Byung-Il Ryu +13 more
TL;DR: In this paper, the authors demonstrate a single metal gate 65nm CMOS McFET (multichannel field effect transistor) SRAM cell transistor with high static noise margin (SNM) of 350mV at 1.0V.
Patent
Gate-all-around integrated circuit devices
TL;DR: In this paper, the first and second source/drain regions form p-n rectifying junctions with the active area of a gate-all-around integrated circuit, and an insulated gate electrode surrounds the channel region.