scispace - formally typeset
S

Sven Peters

Publications -  14
Citations -  901

Sven Peters is an academic researcher. The author has contributed to research in topics: Quantum cascade laser & Laser. The author has an hindex of 6, co-authored 13 publications receiving 692 citations.

Papers
More filters
Journal ArticleDOI

Mid-infrared optical properties of thin films of aluminum oxide, titanium dioxide, silicon dioxide, aluminum nitride, and silicon nitride

TL;DR: The investigation shows how sensitive the refractive index functions are to the O2 and N2 flow rates, and for which growth conditions the materials deposit homogeneously, and allows conclusions to be drawn on the degree of amorphousness and roughness.
Journal ArticleDOI

Tensile strained GeSn on Si by solid phase epitaxy

TL;DR: In this article, single crystalline GeSn with tensile strain on silicon substrates was demonstrated by limiting the adatom surface mobility during deposition and then transforming the amorphous GeSn layers into single-crystal GeSn by solid phase epitaxy.

Mid-infrared optical properties of thin films of aluminum oxide, titanium dioxide, silicon dioxide, aluminum nitride, and silicon nitride. Appl. Opt. 51, 6789-6798

TL;DR: In this article, the complex refractive index components, n and k, have been studied for thin films of several common dielectric materials with a low to medium this article as functions of wavelength and stoichiometry for mid-infrared (MIR) wavelengths within the range 1.54-14.29 μm.
Journal ArticleDOI

Broadband multilayer anti-reflection coating for mid-infrared range from 7 μm to 12 μm

TL;DR: A design concept for broadband anti-reflection coatings for the mid-infrared that allows thinner film thickness and characterize its properties in the mid -infrared range from 7 μm to 12 μm is described.
Journal ArticleDOI

Structural and Optical Properties of Amorphous and Crystalline GeSn Layers on Si

TL;DR: In this article, structural and optical properties of metastable amorphous and crystalline GeSn layers on Si substrates were investigated, and a method to suppress Sn segregation and increase the substitutional Sn concentration was discussed.