T
T. E. F. M. Standaert
Researcher at State University of New York System
Publications - 15
Citations - 1409
T. E. F. M. Standaert is an academic researcher from State University of New York System. The author has contributed to research in topics: Etching (microfabrication) & Reactive-ion etching. The author has an hindex of 12, co-authored 15 publications receiving 1326 citations.
Papers
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Journal ArticleDOI
Study of the SiO2-to-Si3N4 etch selectivity mechanism in inductively coupled fluorocarbon plasmas and a comparison with the SiO2-to-Si mechanism
M. Schaepkens,T. E. F. M. Standaert,N. R. Rueger,Pgm Patrick Sebel,Gottlieb S. Oehrlein,J. M. Cook +5 more
TL;DR: In this paper, the mechanisms underlying selective etching of a SiO2 layer over a Si or Si3N4 underlayer, a process of vital importance to modern integrated circuit fabrication technology, has been studied.
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Role of steady state fluorocarbon films in the etching of silicon dioxide using CHF3 in an inductively coupled plasma reactor
N. R. Rueger,JJ Beulens,M. Schaepkens,M. F. Doemling,J. M. Mirza,T. E. F. M. Standaert,Gottlieb S. Oehrlein +6 more
TL;DR: In this article, the role of the steady state fluorocarbon film present on silicon dioxide during the etching of planarized coils has been investigated in the presence of an intermediate region where etching occurs.
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High density fluorocarbon etching of silicon in an inductively coupled plasma: Mechanism of etching through a thick steady state fluorocarbon layer
T. E. F. M. Standaert,M. Schaepkens,N. R. Rueger,Pgm Patrick Sebel,Gottlieb S. Oehrlein,J. M. Cook +5 more
TL;DR: In this paper, a model is developed that describes the etch kinetics through a fluorocarbon layer based on a fluorine diffusion transport mechanism, which is consistent with the data when one or two of the fol...
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Role of fluorocarbon film formation in the etching of silicon, silicon dioxide, silicon nitride, and amorphous hydrogenated silicon carbide
T. E. F. M. Standaert,Christer Hedlund,Eric A. Joseph,Gottlieb S. Oehrlein,Timothy J. Dalton +4 more
TL;DR: In this article, it was shown that the thickness of the fluorocarbon film is not the main parameter controlling the substrate etch rate, but ion-induced defluorination plays a major role in the etching process.
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Influence of reactor wall conditions on etch processes in inductively coupled fluorocarbon plasmas
TL;DR: In this article, the influence of the wall temperature on the performance of high density fluorocarbon plasma etch processes has been studied, and it was shown that adequate temperature control can increase oxide etch selectivity over nitride and silicon.