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T. H. Metzger

Researcher at Max Planck Society

Publications -  180
Citations -  4092

T. H. Metzger is an academic researcher from Max Planck Society. The author has contributed to research in topics: Scattering & Diffraction. The author has an hindex of 34, co-authored 180 publications receiving 3915 citations. Previous affiliations of T. H. Metzger include Ludwig Maximilian University of Munich & European Synchrotron Radiation Facility.

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Nanometer-scale resolution of strain and interdiffusion in self-assembled InAs/GaAs quantum dots

TL;DR: Tomographic nanometer-scale images of self-assembled InAs/GaAs quantum dots from surface-sensitive x-ray diffraction yield the shape of the dots along with the lattice parameter distribution and the vertical interdiffusion profile on a subnanometer scale.
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Osmotic pressure induced tensile forces in tendon collagen.

TL;DR: It is suggested that water-generated tensile stresses may play a role in living collagen-based materials such as tendon or bone as well as technical applications, such as the fabrication of leather or parchment.
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Determination of strain fields and composition of self-organized quantum dots using x-ray diffraction

TL;DR: A scattering theory for grazing incidence diffraction is derived for the case of highly strained, uncapped nanostructures in this article, which allows us to determine shape, strain fields, and interdiffusion in semiconductor quantum dots grown in the Stranski\char21{}Krastanov mode.
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Three-dimensional high-resolution quantitative microscopy of extended crystals

TL;DR: In this article, the spatial dependence of the three-dimensional Bragg peak intensity is mapped and the entire dataset subsequently inverted with a Bragg-adapted phase retrieval algorithm, which can be used for a wide variety of crystalline materials, ranging from life science to microelectronics.
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Direct determination of strain and composition profiles in SiGe islands by anomalous x-Ray diffraction at high momentum transfer.

TL;DR: The anomalous x-ray scattering method is demonstrated for SiGe dome-shaped islands grown on Si(001), and it is found that the composition inside the island changes rather abruptly, whereas the lattice parameter relaxes continuously.