There is, I think, something ethereal about i —the square root of minus one. I remember first hearing about it at school. It seemed an odd beast at that time—an intruder hovering on the edge of reality.

Usually familiarity dulls this sense of the bizarre, but in the case of i it was the reverse: over the years the sense of its surreal nature intensified. It seemed that it was impossible to write mathematics that described the real world in …

I and i

Instabilities in semiconductor heterostructure growth can be exploited for the self-organized formation of nanostructures, allowing for carrier confinement in all three spatial dimensions. Beside the description of various growth modes, the experimental characterization of structural properties, such as size and shape, chemical composition, and strain distribution is presented. The authors discuss the calculation of strain fields, which play an important role in the formation of such nanostructures and also influence their structural and optoelectronic properties. Several specific materials systems are surveyed together with important applications.

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Structural properties of self-organized semiconductor nanostructures

The understanding and management of strain is of fundamental importance in the design and implementation of materials. The strain properties of nanocrystalline materials are different from those of the bulk because of the strong influence of their surfaces and interfaces, which can be used to augment their function and introduce desirable characteristics. Here we explain how new X-ray diffraction techniques, which take advantage of the latest synchrotron radiation sources, can be used to obtain quantitative three-dimensional images of strain. These methods will lead, in the near future, to new knowledge of how nanomaterials behave within active devices and on unprecedented timescales.

Coherent X-ray diffraction imaging of strain at the nanoscale.

Real-time observations were made of the shape change from pyramids to domes during the growth of germanium-silicon islands on silicon (001). Small islands are pyramidal in shape, whereas larger islands are dome-shaped. During growth, the transition from pyramids to domes occurs through a series of asymmetric transition states with increasing numbers of highly inclined facets. Postgrowth annealing of pyramids results in a similar shape change process. The transition shapes are temperature dependent and transform reversibly to the final dome shape during cooling. These results are consistent with an anomalous coarsening model for island growth.

Transition states between pyramids and domes during Ge/Si island growth

Energy transfer from photoexcited zero-dimensional systems to metallic systems plays a prominent role in modern day materials science. A situation of particular interest concerns the interaction between a photoexcited dipole and an atomically thin metal. The recent discovery of graphene layers permits investigation of this phenomenon. Here we report a study of fluorescence from individual CdSe/ZnS nanocrystals in contact with single- and few-layer graphene sheets. The rate of energy transfer is determined from the strong quenching of the nanocrystal fluorescence. For single-layer graphene, we find a rate of approximately 4 ns(-1), in agreement with a model based on the dipole approximation and a tight-binding description of graphene. This rate increases significantly with the number of graphene layers, before approaching the bulk limit. Our study quantifies energy transfer to and fluorescence quenching by graphene, critical properties for novel applications in photovoltaic devices and as a molecular ruler.

http://absimage.aps.org/image/MAR10/MWS_MAR10-2009-006247.pdf

Resonant Energy Transfer from Individual Semiconductor Nanocrystals to Graphene

In this study, large-area hexagonal-packed Si nanorod (SiNR) arrays in conjunction with Au nanoparticles (AuNPs) were fabricated for surface-enhanced Raman spectroscopy (SERS). We have achieved ultrasensitive molecular detection with high reproducibility and spatial uniformity. A finite-difference time-domain simulation suggests that a wide range of three-dimensional electric fields are generated along the surfaces of the SiNR array. With the tuning of the gap and diameter of the SiNRs, the produced long decay length (>130 nm) of the enhanced electric field makes the SERS substrate a zero-gap system for ultrasensitive detection of large biomolecules. In the detection of R6G molecules, our SERS system achieved an enhancement factor of >107 with a relative standard deviation as small as 3.9–7.2% over 30 points across the substrate. More significantly, the SERS substrate yielded ultrasensitive Raman signals on long amyloid-β fibrils at the single-fibril level, which provides promising potentials for ultrasen...

Large-Area Au-Nanoparticle-Functionalized Si Nanorod Arrays for Spatially Uniform Surface-Enhanced Raman Spectroscopy.

We report on a combination of lithography and self-assembly techniques which results in long-range two-dimensionally ordered Ge islands. Island lattices with perpendicular but also with obliquely oriented unit vectors were realized. Quantitative analysis of the island topographies demonstrates that the size dispersion of these islands is smaller than that found on flat substrates. Furthermore, island formation on the patterned substrates is observed for a smaller amount of Ge deposition. However, with further Ge deposition an increasing amount is incorporated into the sidewalls.

Site-controlled and size-homogeneous Ge islands on prepatterned Si (001) substrates

Two-dimensional (2D) periodic arrays of Ge islands were realized on prepatterned Si (001) substrates by solid-source molecular-beam epitaxy. Atomic-force microscopy images demonstrate that the Ge islands are formed in the 2D laterally ordered pits of patterned substrates. The 2D periodicity of the substrate pattern is replicated throughout a stack of Ge island layers by strain-driven vertical ordering. Photoluminescence spectra of the ordered Ge islands show well-resolved peaks of the no-phonon signal and the transverse-optical phonon replica. These peaks are observed at nearly the same energy as those of random Ge islands deposited under the same conditions on unpatterned Si substrates.

Two-dimensional periodic positioning of self-assembled Ge islands on prepatterned Si (001) substrates

Anomalous x-ray scattering is employed for quantitative measurements of the Ge composition profile in islands on Si(001). The anomalous effect in SiGe is enhanced exploiting the dependence of the complex atomic form factors on the momentum transfer. Comparing the intensity ratios for x-ray energies below and close to the K edge of Ge at various Bragg reflections in the grazing incidence diffraction setup, the sensitivity for the Ge profile is considerably enhanced. The method is demonstrated for SiGe dome-shaped islands grown on Si(001). It is found that the composition inside the island changes rather abruptly, whereas the lattice parameter relaxes continuously.

Direct determination of strain and composition profiles in SiGe islands by anomalous x-Ray diffraction at high momentum transfer.

Self-assembled Ge islands were grown on stripe-patterned Si(001) substrates by solid source molecular beam epitaxy. The surface morphology obtained by atomic force microscopy and cross-sectional transmission electron microscopy images shows that the Ge islands are preferentially grown at the sidewalls of pure Si stripes along the [−110] direction at 650 °C or along the trenches, whereas most of the Ge islands are formed on the top terrace when the patterned stripes are covered by a strained GeSi buffer layer. Reducing the growth temperature to 600 °C results in a nucleation of Ge islands both on the top terrace and at the sidewall of pure Si stripes. A qualitative analysis, based on the growth kinetics, demonstrates that the step structure of the stripes, the external strain field, and the local critical wetting layer thickness for the islands formation contribute to the preferential positioning of Ge islands on the stripes.

Zhenyang Zhong

Papers

Large-Area Au-Nanoparticle-Functionalized Si Nanorod Arrays for Spatially Uniform Surface-Enhanced Raman Spectroscopy.

Site-controlled and size-homogeneous Ge islands on prepatterned Si (001) substrates

Two-dimensional periodic positioning of self-assembled Ge islands on prepatterned Si (001) substrates

Direct determination of strain and composition profiles in SiGe islands by anomalous x-Ray diffraction at high momentum transfer.

Positioning of self-assembled Ge islands on stripe-patterned Si(001) substrates