T
Takeo Ohsawa
Researcher at National Institute for Materials Science
Publications - 105
Citations - 1589
Takeo Ohsawa is an academic researcher from National Institute for Materials Science. The author has contributed to research in topics: Thin film & Scanning tunneling microscope. The author has an hindex of 20, co-authored 105 publications receiving 1383 citations. Previous affiliations of Takeo Ohsawa include Pacific Northwest National Laboratory & Saint-Gobain.
Papers
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Journal ArticleDOI
Negligible "negative space-charge layer effects" at oxide-electrolyte/electrode interfaces of thin-film batteries.
Masakazu Haruta,Susumu Shiraki,Tohru Suzuki,Akichika Kumatani,Takeo Ohsawa,Yoshitaka Takagi,Ryouta Shimizu,Taro Hitosugi +7 more
TL;DR: The surprisingly low electrolyte/electrode interface resistance of 8.6 Ω cm(2) observed in thin-film batteries indicates that the negative space-charge layer effects at the Li3PO(4-x)N(x)/LiCoO2 interface are negligible and demonstrates that it is possible to fabricate all-solid state batteries with faster charging/discharging properties.
Journal ArticleDOI
Preparation of Atomically Smooth TiO2 Single Crystal Surfaces and Their Photochemical Property
TL;DR: In this article, the photochemical properties of rutile TiO2 surfaces were investigated and shown to depend on the surface orientation and the photo-reduction of Ag+ to Ag metal from an aqueous solution.
Journal ArticleDOI
Fabrication of all-solid-state battery using epitaxial LiCoO2 thin films
Susumu Shiraki,Hideki Oki,Yoshitaka Takagi,Tohru Suzuki,Akichika Kumatani,Ryota Shimizu,Masakazu Haruta,Takeo Ohsawa,Yukio Sato,Yuichi Ikuhara,Yuichi Ikuhara,Taro Hitosugi +11 more
TL;DR: In this paper, the authors demonstrate the orientation control of LiCoO2 epitaxial thin films deposited on (110)-2 × 1 reconstructed surfaces of Au and Pt by using pulsed laser deposition.
Proceedings ArticleDOI
1Mb 4T-2MTJ nonvolatile STT-RAM for embedded memories using 32b fine-grained power gating technique with 1.0ns/200ps wake-up/power-off times
Takeo Ohsawa,Hiroki Koike,Sadahiko Miura,Hiroaki Honjo,K. Tokutome,Shinji Ikeda,Takahiro Hanyu,Hideo Ohno,Tetsuo Endoh +8 more
TL;DR: A 1Mb nonvolatile STT-RAM using the 4T-2MTJ cell is designed and fabricated using 90nm CMOS and MTJ processes and experimentally shown to retain data with static noise margin (SNM) 0.32V under Vdd=1V.
Journal ArticleDOI
Crystallographic dependence of visible-light photoactivity in epitaxial TiO2-xNx anatase and rutile
Takeo Ohsawa,Igor Lyubinetsky,Yingge Du,Michael A. Henderson,Vaithiyalingam Shutthanandan,Scott A. Chambers +5 more
TL;DR: In this paper, structural and compositionally well-defined epitaxial films of anatase (001) and rutile (110) were used to show a qualitative difference between the visible-light activities for the two polymorphs.