Akira Yoshii

TL;DR: In this article, the authors investigated the physical mechanisms responsible for light emission in Si under varying doping and carrier conditions and as a function of hot-carrier distribution functions, and concluded that the dominant light-emission mechanism in normally biased Si MOSFET's is a combination of direct and phonon-assisted inter-conduction-band radiation.

TL;DR: It is shown that impact-ionization processes in Si are IinherentlyP anisotropic and that it is crucial to take account of this anisotropy in analyzing the ionization processes.

TL;DR: Although the computed data vary widely, depending on the models and input parameters which are used, they provide for the first time a quantitative (though not comprehensive) comparison of Boltzmann Equation solutions.

TL;DR: In this article, a topography simulator using a Generalized Solid Modeling (GSM) method is presented to simulate isotropic or anisotropic deposition and etch process steps on a workpiece.

TL;DR: In this paper, an accurate three-dimensional analysis of semiconductor devices based on the general transport equations is carried out, using finite difference formulation and ICCG (Incomplete Choleski and Conjugate Gradient) methods to reduce computational time and memory requirements.