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Thomas Nirschl
Researcher at Infineon Technologies
Publications - 77
Citations - 934
Thomas Nirschl is an academic researcher from Infineon Technologies. The author has contributed to research in topics: Memory cell & Sense amplifier. The author has an hindex of 13, co-authored 77 publications receiving 927 citations. Previous affiliations of Thomas Nirschl include Qimonda & IBM.
Papers
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Proceedings ArticleDOI
Novel Lithography-Independent Pore Phase Change Memory
Matthew J. Breitwisch,Thomas Nirschl,Chieh-Fang Chen,Yu Zhu,Ming-Hsiu Lee,Mark C. H. Lamorey,Geoffrey W. Burr,Eric A. Joseph,A. G. Schrott,Jan Boris Philipp,Roger W. Cheek,T.D. Happ,S. H. Chen,S. Zaidr,Philip L. Flaitz,John Bruley,R. Dasaka,Bipin Rajendran,S. Rossnage,Min Yang,Yi-Chou Chen,R. Bergmann,H.L. Lung,Chung H. Lam +23 more
TL;DR: In this article, the pore diameter is accurately defined by intentionally creating a "keyhole" with conformal deposition, and a novel "pore" phase change memory cell, whose critical dimension (CD) is independent of lithography, is demonstrated.
Patent
Current compliant sensing architecture for multilevel phase change memory
TL;DR: In this paper, a memory device and a method of reading the same includes a phase change element having a data state associated therewith that features maintaining the consistency of the data state of the phase change elements in the presence of a read current.
Patent
Write circuit for resistive memory
Thomas Nirschl,トーマス,ニルシュル +1 more
TL;DR: In this paper, a multivalue phase change memory is provided with a first resistive memory cell, a current source configured to provide an input current indicating a desired resistance value of the first memory cell and a current mirror that mirrors the input current to supply an output current.
Patent
Integrated circuit having dielectric layer including nanocrystals
Thomas Nirschl,Ronald Kakoschke +1 more
TL;DR: An integrated circuit includes a first electrode, resistivity changing material coupled to the first electrode and a second electrode as discussed by the authors, which includes a dielectric material layer between the resistor changing material and the second electrode.
Patent
Resistive memory including bipolar transistor access devices and its manufacture method
TL;DR: In this paper, the first bit line was replaced by a second bit line, a second resistive memory element coupled between an emitter of the first bipolar transistor and the second bit lines.