Chung H. Lam

TL;DR: This work discusses the critical aspects that may affect the scaling of PCRAM, including materials properties, power consumption during programming and read operations, thermal cross-talk between memory cells, and failure mechanisms, and discusses experiments that directly address the scaling properties of the phase-change materials themselves.

TL;DR: In this article, the authors survey the current state of phase change memory (PCM), a nonvolatile solid-state memory technology built around the large electrical contrast between the highly resistive amorphous and highly conductive crystalline states in so-called phase change materials.

TL;DR: In this article, the authors review the candidate solid-state nonvolatile memory technologies that potentially could be used to construct a storage-class memory (SCM) and compare the potential for practical scaling to ultrahigh effective areal density for each of these candidate technologies.

TL;DR: This work discusses evolutionary extensions of conventional flash memory, such as SONOS and nanotraps, as well as a number of revolutionary new memory technologies, including ferroelectric, magnetic, phase-change, and resistive random-access memories, including perovskites and solid electrolytes, and finally organic and polymeric memory.

TL;DR: In this article, the authors survey progress in the PCM field over the past five years, ranging from large-scale PCM demonstrations to materials improvements for high-temperature retention and faster switching.