scispace - formally typeset
T

Thomas Schroeder

Researcher at Institut für Kristallzüchtung

Publications -  81
Citations -  3988

Thomas Schroeder is an academic researcher from Institut für Kristallzüchtung. The author has contributed to research in topics: X-ray photoelectron spectroscopy & Graphene. The author has an hindex of 34, co-authored 81 publications receiving 3445 citations. Previous affiliations of Thomas Schroeder include Max Planck Society & Innovations for High Performance Microelectronics.

Papers
More filters
Journal ArticleDOI

Vibrational spectra of alumina- and silica-supported vanadia revisited: An experimental and theoretical model catalyst study

TL;DR: In this paper, it was shown that the vanadia particles exhibit very similar morphology on both supports but differ in the extent of particle-support interactions, which strongly affect the CO adsorption behavior of the particles.
Journal ArticleDOI

Ultra-Sensitive Graphene-Plasmonic Hybrid Platform for Label-Free Detection

TL;DR: It is demonstrated that graphene can play a key role in quantitative study of SERS mechanisms, and can also serve as a promising building block in SERS active structures especially for biosensor applications.
Journal ArticleDOI

Model for the Resistive Switching Effect in $ \hbox{HfO}_{2}$ MIM Structures Based on the Transmission Properties of Narrow Constrictions

TL;DR: In this paper, a physics-based analytical model for the currentvoltage characteristics corresponding to the low and high resistive states in electroformed metal-insulator-metal structures with HfO2 layers is proposed.
Journal ArticleDOI

Label-Free SERS Selective Detection of Dopamine and Serotonin Using Graphene-Au Nanopyramid Heterostructure.

TL;DR: Dopamine and serotonin could be detected and distinguished from each other at 10(-10) M level in 1 s data acquisition time without any pretreatment and labeling process and the heterostructure realized nanomolar detection of neurotransmitters in the presence of simulated body fluids.
Journal ArticleDOI

Towards forming-free resistive switching in oxygen engineered HfO2−x

TL;DR: In this article, the resistive switching behavior of stoichiometric HfO2 and oxygen-deficient HO2−x thin films grown on TiN electrodes using reactive molecular beam epitaxy was investigated.