T
Thomas Waechtler
Researcher at Chemnitz University of Technology
Publications - 24
Citations - 664
Thomas Waechtler is an academic researcher from Chemnitz University of Technology. The author has contributed to research in topics: Atomic layer deposition & Copper. The author has an hindex of 11, co-authored 24 publications receiving 589 citations. Previous affiliations of Thomas Waechtler include Fraunhofer Society.
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Journal ArticleDOI
Enhancement of the thermoelectric properties of PEDOT:PSS thin films by post-treatment
Jinji Luo,Detlef Billep,Thomas Waechtler,Thomas Waechtler,Thomas Otto,Marius Toader,Ovidiu D. Gordan,Evgeniya Sheremet,Joerg Martin,Michael Hietschold,Dietrich R. T. Zahn,Thomas Gessner,Thomas Gessner +12 more
TL;DR: In this paper, the thermoelectric properties of poly(3,4-ethylenedioxylthiophene):poly(styrene sulfonate) (PEDOT:PSS) thin films at room temperature are studied.
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Copper Oxide Films Grown by Atomic Layer Deposition from Bis(tri-n-butylphosphane)copper(I)acetylacetonate on Ta, TaN, Ru, and SiO2
Thomas Waechtler,Steffen Oswald,Nina Roth,Alexander Jakob,Heinrich Lang,Ramona Ecke,Stefan E. Schulz,Thomas Gessner,Anastasia Moskvinova,Steffen Schulze,Michael Hietschold +10 more
TL;DR: In this article, the thermal atomic layer deposition (ALD) of copper oxide films from the nonfluorinated yet liquid precursor bis(tri-n-butylphosphane)copper(I)acetylacetonate, [( n Bu 3 P) 2 Cu(acac)], and wet O 2 on Ta, TaN, Ru, and SiO 2 substrates at temperatures of < 160°C is reported.
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ALD-grown seed layers for electrochemical copper deposition integrated with different diffusion barrier systems
Thomas Waechtler,Shao-Feng Ding,Lutz Hofmann,Robert Mothes,Qi Xie,Steffen Oswald,Christophe Detavernier,Stefan E. Schulz,Xin-Ping Qu,Heinrich Lang,Thomas Gessner +10 more
TL;DR: In this article, the deposition of Cu seed layers for electrochemical Cu deposition via atomic layer deposition (ALD) of copper oxide and subsequent thermal reduction at temperatures between 110 and 120^oC was studied on different diffusion barrier systems.
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New precursors for CVD copper metallization
TL;DR: In this paper, a novel CVD copper process is described using two new copper CVD precursors, KI3 and KI5, for the fabrication of IC or TSV (Through Silicon Via) copper interconnects.
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Ruthenocenes and Half‐Open Ruthenocenes: Synthesis, Characterization, and Their Use as CVD Precursors for Ruthenium Thin Film Deposition
André Tuchscherer,Colin Georgi,Nina Roth,Dieter Schaarschmidt,Tobias Rüffer,Thomas Waechtler,Thomas Waechtler,Stefan E. Schulz,Stefan E. Schulz,Steffen Oswald,Thomas Gessner,Heinrich Lang +11 more
TL;DR: In this paper, a series of trimethylsilyl and tert-butyl-substituted ruthenocenes of the type Ru(η5-C5H3R1R2) (2, R1 = SiMe3, R2 = R3 = R4 = H; 3, R 1 = R13 = tBu, R 2 = SiMo3,R 4 = H, 4, R