M
Michel Houssa
Researcher at Katholieke Universiteit Leuven
Publications - 353
Citations - 10857
Michel Houssa is an academic researcher from Katholieke Universiteit Leuven. The author has contributed to research in topics: Gate dielectric & High-κ dielectric. The author has an hindex of 49, co-authored 341 publications receiving 9863 citations. Previous affiliations of Michel Houssa include University of Provence & Centre national de la recherche scientifique.
Papers
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Journal ArticleDOI
Strain-induced semiconductor to metal transition in the two-dimensional honeycomb structure of MoS2
Emilio Scalise,Michel Houssa,Geoffrey Pourtois,Geoffrey Pourtois,Valery V. Afanas'ev,Andre Stesmans +5 more
TL;DR: In this article, the electronic properties of two-dimensional honeycomb structures of molybdenum disulfide (MoS2) subjected to biaxial strain have been investigated using first-principles calculations based on density functional theory.
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Buckled two-dimensional Xene sheets
TL;DR: The current state of the art and future opportunities in the manipulation and stability of these materials, their functions and applications, and novel device concepts are highlighted.
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Electronic properties of hydrogenated silicene and germanene
Michel Houssa,Emilio Scalise,Kiroubanand Sankaran,Geoffrey Pourtois,Valeri Afanas'ev,Andre Stesmans +5 more
TL;DR: In this paper, the electronic properties of hydrogenated silicene and germanene, so called silicane and Germanane, respectively, are investigated using first-principles calculations based on density functional theory.
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Trap-assisted tunneling in high permittivity gate dielectric stacks
Michel Houssa,Marko Tuominen,Mohamed Naili,Valeri Afanas'ev,Andre Stesmans,Suvi Haukka,M.M. Heyns +6 more
TL;DR: In this article, the electrical characteristics of SiOx/ZrO2 and Si Ox/Ta2O5 gate dielectric stacks were investigated and the current density was shown to be strongly temperature dependent at low voltage (below about 2 V).
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Two-dimensional Si nanosheets with local hexagonal structure on a MoS(2) surface.
Daniele Chiappe,Emilio Scalise,Eugenio Cinquanta,Carlo Grazianetti,Carlo Grazianetti,Bas van den Broek,Marco Fanciulli,Marco Fanciulli,Michel Houssa,Alessandro Molle +9 more
TL;DR: The structural and electronic properties of a Si nanosheet grown onto a MoS2 substrate by means of molecular beam epitaxy are assessed and Epitaxially grown Si is shown to adapt to the trigonal prismatic surface lattice ofMoS2 by forming two-dimensional nanodomains.