This paper proposes a synthesis of different electrical methods used to estimate the temperature of power semiconductor devices. The following measurement methods are introduced: the voltage under low current levels, the threshold voltage, the voltage under high current levels, the gate-emitter voltage, the saturation current, and the switching times. All these methods are then compared in terms of sensitivity, linearity, accuracy, genericity, calibration needs, and possibility of characterizing the thermal impedance or the temperature during the operation of the converter. The measurement of thermo-sensitive parameters of wide bandgap semiconductors is also discussed.

/pdf/temperature-measurement-of-power-semiconductor-devices-by-1nz3bww95c.pdf

Temperature Measurement of Power Semiconductor Devices by Thermo-Sensitive Electrical Parameters—A Review

Recent growth of the insulated gate bipolar transistor (IGBT) module market has been driven largely by the increasing demand for an efficient way to control and distribute power in the field of renewable energy, hybrid/electric vehicles, and industrial equipment. For safety-critical and mission-critical applications, the reliability of IGBT modules is still a concern. Understanding the physics-of-failure of IGBT modules has been critical to the development of effective condition monitoring (CM) techniques as well as reliable prognostic methods. This review paper attempts to summarize past developments and recent advances in the area of CM and prognostics for IGBT modules. The improvement in material, fabrication, and structure is described. The CM techniques and prognostic methods proposed in the literature are presented. This paper concludes with recommendations for future research topics in the CM and prognostics areas.

Physics-of-Failure, Condition Monitoring, and Prognostics of Insulated Gate Bipolar Transistor Modules: A Review

Three-phase inverters are currently utilized in an enormous variety of industrial applications, including variable-speed ac drives. However, due to their complexity and exposure to several stresses, they are prone to suffer critical failures. Accordingly, this paper presents a novel diagnostic algorithm that allows the real-time detection and localization of multiple power switch open-circuit faults in inverter-fed ac motor drives. The proposed method is quite simple and just requires the measured motor phase currents and their corresponding reference signals, already available from the main control system, therefore avoiding the use of additional sensors and hardware. Several experimental results using a vector-controlled permanent-magnet synchronous motor drive are presented, showing the diagnostic algorithm effectiveness, its relatively fast detection time, and its robustness against false alarms.

A New Algorithm for Real-Time Multiple Open-Circuit Fault Diagnosis in Voltage-Fed PWM Motor Drives by the Reference Current Errors

Advances in power electronics enable efficient and flexible processing of electric power in the application of renewable energy sources, electric vehicles, adjustable-speed drives, etc. More and more efforts are devoted to better power electronic systems in terms of reliability to ensure high availability, long lifetime, sufficient robustness, low maintenance cost and low cost of energy. However, the reliability predictions are still dominantly according to outdated models and terms, such as MIL-HDBK-217H handbook models, Mean-Time-To-Failure (MTTF), and Mean-Time-Between-Failures (MTBF). A collection of methodologies based on Physics-of-Failure (PoF) approach and mission profile analysis are presented in this paper to perform reliability-oriented design of power electronic systems. The corresponding design procedures and reliability prediction models are provided. Further on, a case study on a 2.3 MW wind power converter is discussed with emphasis on the reliability critical components IGBTs. Different aspects of improving the reliability of the power converter are mapped. Finally, the challenges and opportunities to achieve more reliable power electronic systems are addressed.

Design for reliability of power electronic systems

This paper presents a diagnostic and prognostic condition monitoring method for insulated-gate bipolar transistor (IGBT) power modules for use primarily in electric vehicle applications. The wire-bond-related failure, one of the most commonly observed packaging failures, is investigated by analytical and experimental methods using the on-state voltage drop as a failure indicator. A sophisticated test bench is developed to generate and apply the required current/power pulses to the device under test. The proposed method is capable of detecting small changes in the failure indicators of the IGBTs and freewheeling diodes and its effectiveness is validated experimentally. The novelty of the work lies in the accurate online testing capacity for diagnostics and prognostics of the power module with a focus on the wire bonding faults, by injecting external currents into the power unit during the idle time. Test results show that the IGBT may sustain a loss of half the bond wires before the impending fault becomes catastrophic. The measurement circuitry can be embedded in the IGBT drive circuits and the measurements can be performed in situ when the electric vehicle stops in stop-and-go, red light traffic conditions, or during routine servicing.

/pdf/in-situ-diagnostics-and-prognostics-of-wire-bonding-faults-2hvppczdij.pdf

In Situ Diagnostics and Prognostics of Wire Bonding Faults in IGBT Modules for Electric Vehicle Drives

This paper presents an experimental study on the ageing of insulated-gate bipolar transistor (IGBT) power modules. The aim is to identify the effects of power cycling on these devices with high baseplate temperatures (60 °C to 90 °C) and wide temperature swings (60 °C to 100 °C). These values for thermal stresses have been defined according to automotive applications. The test conditions are provided by two types of test benches that will be described in this paper. The changes in electrical and thermal indicators are observed regularly by a monitoring system. At the end of the test (reaching damage criterion or failure), different analyses are performed (acoustic scanning and SEM imaging), and the damage is listed systematically. Nineteen samples of 600-V 200-A IGBT modules were thus aged using five different power-cycling protocols. The final summary of results shows that ageing mechanisms mainly concern wire bonds and emitter metallization, with gradual impact depending on protocol severity.

Ageing and Failure Modes of IGBT Modules in High-Temperature Power Cycling

The supervision of semiconductor power devices in operation demonstrates an obvious interest to improve the operating safety of electronic power converters used in critical applications. Unfortunately, this is a significant challenge due to the variability of stress conditions on the one hand and to the difficulty to implement accurate measurement systems in power stages on the other. Using VCE measurement as a real-time supervision method is evaluated here by using aging test results obtained on insulated gate bipolar transistor (IGBT) modules stressed by power cycling. These results are related to the aging of bond wires and metallization, on the top part of the module. Results were obtained in original test benches whose characteristics are overviewed briefly in the first part of this paper, along with a description of test conditions. The second part presents selected results extracted from a larger work and focusing on the VCE evolution with respect to degradations of the module's top part. Their analysis highlights the potential of VCE measurement. The last part proposes the principle of a specific system able to achieve real-time VCE supervision in the test benches in operation.

Evaluation of $V_{\rm ce}$ Monitoring as a Real-Time Method to Estimate Aging of Bond Wire-IGBT Modules Stressed by Power Cycling

Power module packaging technologies have been experiencing extensive changes as the novel silicon carbide (SiC) power devices with superior performance become commercially available. This article presents an overview of power module packaging technologies in this transition, with an emphasis on the challenges that current standard packaging face, requirements that future power module packaging needs to fulfill, and recent advances on packaging technologies. The standard power module structure, which is a widely used current practice to package SiC devices, is reviewed, and the reasons why novel packaging technologies should be developed are described in this article. The packaging challenges associated with high-speed switching, thermal management, high-temperature operation, and high-voltage isolation are explained in detail. Recent advances on technologies, which try to address the limitations of standard packaging, both in packaging elements and package structure are summarized. The trend toward novel soft-switching power converters gave rise to problems regarding package designs of unconventional module configuration. Potential applications areas, such as aerospace applications, introduce low-temperature challenges to SiC packaging. Key issues in these emerging areas are highlighted.

A Review of SiC Power Module Packaging Technologies: Challenges, Advances, and Emerging Issues

This paper presents an original design option dedicated to output-filtered pulsewidth modulation inverters used in uninterruptible power systems, embedded networks, or motor drives operating on long cables. It is based on the coupling of interleaved inverter cells by means of intercell transformers (ICTs) and is characterized by very good dynamic behavior on load transients, which is an important issue in such applications. ICT solutions are compared with the classical interleaved solutions using separate inductors. A specific design method is developed to achieve this comparison based on toroidal core shapes. The results obtained with a 600 V, 7.5 kW inverter show the usefulness of ICT-based designs, especially when nanocrystalline magnetic material is used; high specific power and very good dynamic performances are obtained.

Vanessa Smet

Papers

Ageing and Failure Modes of IGBT Modules in High-Temperature Power Cycling

Evaluation of $V_{\rm ce}$ Monitoring as a Real-Time Method to Estimate Aging of Bond Wire-IGBT Modules Stressed by Power Cycling

A Review of SiC Power Module Packaging Technologies: Challenges, Advances, and Emerging Issues

Design and Comparison of Inductors and Intercell Transformers for Filtering of PWM Inverter Output

Review of Thermal Packaging Technologies for Automotive Power Electronics for Traction Purposes