V
Vincent Consonni
Researcher at University of Grenoble
Publications - 104
Citations - 3272
Vincent Consonni is an academic researcher from University of Grenoble. The author has contributed to research in topics: Nanowire & Chemical bath deposition. The author has an hindex of 34, co-authored 101 publications receiving 2639 citations. Previous affiliations of Vincent Consonni include Centre national de la recherche scientifique & Commissariat à l'énergie atomique et aux énergies alternatives.
Papers
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Nucleation mechanisms of epitaxial GaN nanowires: Origin of their self-induced formation and initial radius
TL;DR: In this paper, the formation mechanisms of epitaxial GaN nanowires grown within a self-induced approach by molecular-beam epitaxy have been investigated at the onset of the nucleation process by combining in situ reflection high-energy electron-diffraction measurements and ex situ high-resolution transmission electron microscopy imaging.
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Nucleation mechanisms of self-induced GaN nanowires grown on an amorphous interlayer
TL;DR: In this article, the formation mechanisms of GaN nanowires grown on a Si$x$N${y}$ amorphous interlayer within a self-induced approach by molecular beam epitaxy have been investigated by combining in situ reflection high-energy electron-diffraction measurements with ex situ high-resolution transmission electron microscopy imaging.
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Effects of Hexamethylenetetramine on the Nucleation and Radial Growth of ZnO Nanowires by Chemical Bath Deposition
Romain Parize,Jérôme Garnier,Odette Chaix-Pluchery,Claire Verrier,Estelle Appert,Vincent Consonni +5 more
TL;DR: In this paper, the role of hexamethylenetetetramine (HMTA) in the growth of ZnO nanowires is investigated through a large number of nonequimolar CBDs over a broad range of chemical precursor concentrations and ratios.
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Polarity in GaN and ZnO: Theory, measurement, growth, and devices
Jesús Zúñiga-Pérez,Vincent Consonni,Liverios Lymperakis,Xiang Kong,Achim Trampert,Sergio Fernández-Garrido,Oliver Brandt,Hubert Renevier,Stacia Keller,Karine Hestroffer,Markus R. Wagner,Juan Sebastián Reparaz,Fatih Akyol,Siddharth Rajan,Stephanie Rennesson,Tomas Palacios,Guy Feuillet +16 more
TL;DR: In this paper, a review of polarity-related issues in GaN and ZnO is presented, going from theoretical considerations to electronic and optoelectronic devices, through thin film, and nanostructure growth.
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Self-induced growth of GaN nanowires by molecular beam epitaxy: A critical review of the formation mechanisms
TL;DR: In this paper, a general approach of the self-induced growth of GaN nanowires is gained, from the very onset of the nucleation phase through the elongation phase to the coalescence process.