Showing papers in "Applied physics reviews in 2016"

Metal oxide semiconductor thin-film transistors for flexible electronics

Abstract: The field of flexible electronics has rapidly expanded over the last decades, pioneering novel applications, such as wearable and textile integrated devices, seamless and embedded patch-like systems, soft electronic skins, as well as imperceptible and transient implants. The possibility to revolutionize our daily life with such disruptive appliances has fueled the quest for electronic devices which yield good electrical and mechanical performance and are at the same time light-weight, transparent, conformable, stretchable, and even biodegradable. Flexible metal oxide semiconductor thin-film transistors (TFTs) can fulfill all these requirements and are therefore considered the most promising technology for tomorrow's electronics. This review reflects the establishment of flexible metal oxide semiconductor TFTs, from the development of single devices, large-area circuits, up to entirely integrated systems. First, an introduction on metal oxide semiconductor TFTs is given, where the history of the field is revisited, the TFT configurations and operating principles are presented, and the main issues and technological challenges faced in the area are analyzed. Then, the recent advances achieved for flexible n-type metal oxide semiconductor TFTs manufactured by physical vapor deposition methods and solution-processing techniques are summarized. In particular, the ability of flexible metal oxide semiconductor TFTs to combine low temperature fabrication, high carrier mobility, large frequency operation, extreme mechanical bendability, together with transparency, conformability, stretchability, and water dissolubility is shown. Afterward, a detailed analysis of the most promising metal oxide semiconducting materials developed to realize the state-of-the-art flexible p-type TFTs is given. Next, the recent progresses obtained for flexible metal oxide semiconductor-based electronic circuits, realized with both unipolar and complementary technology, are reported. In particular, the realization of large-area digital circuitry like flexible near field communication tags and analog integrated circuits such as bendable operational amplifiers is presented. The last topic of this review is devoted for emerging flexible electronic systems, from foldable displays, power transmission elements to integrated systems for large-area sensing and data storage and transmission. Finally, the conclusions are drawn and an outlook over the field with a prediction for the future is provided.

Equiatomic quaternary Heusler alloys: A material perspective for spintronic applications

Abstract: Half-metallic ferromagnetic (HMF) materials show high spin polarization and are therefore interesting to researchers due to their possible applications in spintronic devices. In these materials, while one spin sub band has a finite density of states at the Fermi level, the other sub band has a gap. Because of their high Curie temperature (TC) and tunable electronic structure, HMF Heusler alloys have a special importance among the HMF materials. Full Heusler alloys with the stoichiometric composition X2YZ (where X and Y are the transition metals and Z is a sp element) have the cubic L21 structure with four interpenetrating fcc sublattices. When each of these four fcc sublattices is occupied by different atoms (XX′YZ), a quaternary Heusler structure with different structural symmetries (space group F-43m, #216) is obtained. Recently, these equiatomic quaternary Heusler alloys (EQHAs) with 1:1:1:1 stoichiometry have attracted a lot of attention due to their superior magnetic and transport properties. A speci...

Direct and indirect measurements on electrocaloric effect: Recent developments and perspectives

Abstract: It has been ten years since the discovery of the giant electrocaloric effect in ferroelectric materials showed that it is possible to employ this effect for substantial cooling applications. This last decade has been marked by increasing research interest, especially in characterizing and measuring the electrocaloric effect using both the so-called indirect and direct approaches. In this context, a comprehensive summary and careful reexamination of these approaches are very timely and of great importance to justify the assumptions used in different measurement techniques. This review is therefore dedicated to cover recent important and rapid advances from both the indirect and direct measurements and provides critical insights relevant for quantifying the electrocaloric effect. It involves electrocaloric materials from normal ferroelectrics, antiferroelectrics, and relaxors, and it fundamentally focuses on how the electrocaloric entropy changes in response to electric field in these typical electrocalorics. The article addresses recent developments, especially during the past three years, such as technical selection of proper polarization-electric field loops, negative electrocaloric effect in antiferroelectrics and relaxors, the controversial debate on the indirect method in relaxors, the important role of field dependence of specific heat, kinetic factors, and so on. Moreover, this review also is concerned with extracting reliable data by direct measurements. Four typical techniques and devices used recently, such as thermocouples, differential scanning calorimeters, specifically designed calorimeters, and scanning thermal microscopy, are briefly reviewed, while infrared cameras are emphasized. We hope that our review will not only provide a useful background to understand fundamentally the electrocaloric effect and what one really measures but also may act as a practical guide to exploit and develop electrocalorics towards the design of suitable devices.

A review of high magnetic moment thin films for microscale and nanotechnology applications

Abstract: The creation of large magnetic fields is a necessary component in many technologies, ranging from magnetic resonance imaging, electric motors and generators, and magnetic hard disk drives in information storage. This is typically done by inserting a ferromagnetic pole piece with a large magnetisation density MS in a solenoid. In addition to large MS, it is usually required or desired that the ferromagnet is magnetically soft and has a Curie temperature well above the operating temperature of the device. A variety of ferromagnetic materials are currently in use, ranging from FeCo alloys in, for example, hard disk drives, to rare earth metals operating at cryogenic temperatures in superconducting solenoids. These latter can exceed the limit on MS for transition metal alloys given by the Slater-Pauling curve. This article reviews different materials and concepts in use or proposed for technological applications that require a large MS, with an emphasis on nanoscale material systems, such as thin and ultra-thin films. Attention is also paid to other requirements or properties, such as the Curie temperature and magnetic softness. In a final summary, we evaluate the actual applicability of the discussed materials for use as pole tips in electromagnets, in particular, in nanoscale magnetic hard disk drive read-write heads; the technological advancement of the latter has been a very strong driving force in the development of the field of nanomagnetism.

Small, fast, and tough: Shrinking down integrated elastomer transducers

Abstract: We review recent progress in miniaturized dielectric elastomer actuators (DEAs), sensors, and energy harvesters. We focus primarily on configurations where the large strain, high compliance, stretchability, and high level of integration offered by dielectric elastomer transducers provide significant advantages over other mm or μm-scale transduction technologies. We first present the most active application areas, including: tunable optics, soft robotics, haptics, micro fluidics, biomedical devices, and stretchable sensors. We then discuss the fabrication challenges related to miniaturization, such as thin membrane fabrication, precise patterning of compliant electrodes, and reliable batch fabrication of multilayer devices. We finally address the impact of miniaturization on strain, force, and driving voltage, as well as the important effect of boundary conditions on the performance of mm-scale DEAs.

Liquid metal actuation by electrical control of interfacial tension

Abstract: By combining metallic electrical conductivity with low viscosity, liquid metals and liquid metal alloys offer new and exciting opportunities to serve as reconfigurable components of electronic, microfluidic, and electromagnetic devices. Here, we review the physics and applications of techniques that utilize voltage to manipulate the interfacial tension of liquid metals; such techniques include electrocapillarity, continuous electrowetting, electrowetting-on-dielectric, and electrochemistry. These techniques lower the interfacial tension between liquid metals and a surrounding electrolyte by driving charged species (or in the case of electrochemistry, chemical species) to the interface. The techniques are useful for manipulating and actuating liquid metals at sub-mm length scales where interfacial forces dominate. We focus on metals and alloys that are liquid near or below room temperature (mercury, gallium, and gallium-based alloys). The review includes discussion of mercury—despite its toxicity—because it has been utilized in numerous applications and it offers a way of introducing several phenomena without the complications associated with the oxide layer that forms on gallium and its alloys. The review focuses on the advantages, applications, opportunities, challenges, and limitations of utilizing voltage to control interfacial tension as a method to manipulate liquid metals.

Plasma engineering of graphene

Abstract: Recently, there have been enormous efforts to tailor the properties of graphene. These improved properties extend the prospect of graphene for a broad range of applications. Plasmas find applications in various fields including materials science and have been emerging in the field of nanotechnology. This review focuses on different plasma functionalization processes of graphene and its oxide counterpart. The review aims at the advantages of plasma functionalization over the conventional doping techniques. Selectivity and controllability of the plasma techniques opens up future pathways for large scale, rapid functionalization of graphene for advanced applications. We also emphasize on atmospheric pressure plasma jet as the future prospect of plasma based functionalization processes.

Polarity in GaN and ZnO: Theory, measurement, growth, and devices

Abstract: The polar nature of the wurtzite crystalline structure of GaN and ZnO results in the existence of a spontaneous electric polarization within these materials and their associated alloys (Ga,Al,In)N and (Zn,Mg,Cd)O. The polarity has also important consequences on the stability of the different crystallographic surfaces, and this becomes especially important when considering epitaxial growth. Furthermore, the internal polarization fields may adversely affect the properties of optoelectronic devices but is also used as a potential advantage for advanced electronic devices. In this article, polarity-related issues in GaN and ZnO are reviewed, going from theoretical considerations to electronic and optoelectronic devices, through thin film, and nanostructure growth. The necessary theoretical background is first introduced and the stability of the cation and anion polarity surfaces is discussed. For assessing the polarity, one has to make use of specific characterization methods, which are described in detail. Subsequently, the nucleation and growth mechanisms of thin films and nanostructures, including nanowires, are presented, reviewing the specific growth conditions that allow controlling the polarity of such objects. Eventually, the demonstrated and/or expected effects of polarity on the properties and performances of optoelectronic and electronic devices are reported. The present review is intended to yield an in-depth view of some of the hot topics related to polarity in GaN and ZnO, a fast growing subject over the last decade.

Silicene: Recent theoretical advances

Abstract: Silicene is a two-dimensional allotrope of silicon with a puckered hexagonal structure closely related to the structure of graphene and that has been predicted to be stable. To date, it has been successfully grown in solution (functionalized) and on substrates. The goal of this review is to provide a summary of recent theoretical advances in the properties of both free-standing silicene as well as in interaction with molecules and substrates, and of proposed device applications.

Optical time-stretch imaging: Principles and applications

Abstract: Breathtaking innovations in optical imaging have opened new exciting avenues for science, industry, and medicine over the last few decades. One of such innovations is optical time-stretch imaging—an emerging method for ultrafast optical imaging that builds on temporally stretching broadband pulses by using dispersive properties of light in both spatial and temporal domains. It achieves continuous image acquisition at an ultrahigh frame rate of 10–1000 million frames per second by overcoming technical and fundamental limitations that exist in traditional imaging methods. By virtue of its inherent affinity with optical signal processing, optical time-stretch imaging can be combined with various optical techniques such as amplification, nonlinear processing, compressive sensing, and pattern correlation to realize unique capabilities that are not possible with the traditional imaging methods. Applications enabled by such capabilities are versatile and include surface inspection, surface vibrometry, particle analysis, and cell screening. In this paper, we review the principles and limitations of conventional optical imaging, the principles and applications of optical time-stretch imaging, and discuss our future perspective.

A multiferroic on the brink: Uncovering the nuances of strain-induced transitions in BiFeO3

Abstract: Bismuth ferrite (BiFeO3) is one of the very few known single-phase multiferroic materials. While the bulk compound is rhombohedral (R), the discovery of an epitaxial strain-induced structural transition into a so-called “super tetragonal phase” (T-phase) in this material incited a flurry of research activity focused on gaining an understanding of this phase transition and its possible functionalities. This metastable phase of BiFeO3 is also multiferroic, with giant ferroelectricpolarization and coexisting antiferromagnetic order, but above all it is the strain relaxation-induced phase mixtures and their outstanding piezoelectric and magnetoelectric responses which continue to intrigue and motivate the physicist and materials scientist communities. Here, we review the research into the T-phase and mixed-phase BiFeO3 system. We begin with a brief summary of the history of the T-phase and an analysis of the structure of the various phases reported in the literature. We then address important questions regarding the symmetry and octahedral rotation patterns and the (as yet underexplored) important role of chemistry in the formation of the metastable T-phase. We follow by describing the phase transitions in this material, and how these may hold promise for large magnetoelectric responses. Finally, we point out some experimental challenges inherent to the study of such a system, and potential pathways for how they may be overcome. It is our intention with this work to highlight important issues that, in our opinion, should be carefully considered by the community in order to use this fascinating materials system for a new paradigm of functionality.

Auxetic nanomaterials: Recent progress and future development

Abstract: Auxetic materials (materials with negative Poisson's ratio) and nanomaterials have independently been, for many years, two of the most active research fields in material science. Recently, these formerly independent fields have begun to intersect in new and interesting ways due to the recent discovery of auxeticity in nanomaterials like graphene, metal nanoplates, black phosphorus, and others. Here, we review the research emerging at the intersection of auxeticity and nanomaterials. We first survey the atomistic mechanisms, both intrinsic and extrinsic, that have been found, primarily through atomistic simulations, to cause auxeticity in nanomaterials. We then outline the available experimental evidence for auxetic nanomaterials. In order to lay the groundwork for future work in this exciting area, we close by discussing several future prospects as well as the current challenges in this field.

Competition between deformability and charge transport in semiconducting polymers for flexible and stretchable electronics

Abstract: The primary goal of the field concerned with organic semiconductors is to produce devices with performance approaching that of silicon electronics, but with the deformability—flexibility and stretchability—of conventional plastics. However, an inherent competition between deformability and charge transport has long been observed in these materials, and achieving the extreme (or even moderate) deformability implied by the word “plastic” concurrently with high charge transport may be elusive. This competition arises because the properties needed for high carrier mobilities—e.g., rigid chains in π-conjugated polymers and high degrees of crystallinity in the solid state—are antithetical to deformability. On the device scale, this competition can lead to low-performance yet mechanically robust devices, or high-performance devices that fail catastrophically (e.g., cracking, cohesive failure, and delamination) under strain. There are, however, some observations that contradict the notion of the mutual exclusivit...

Nanoribbons: From fundamentals to state-of-the-art applications

Abstract: Atomically thin nanoribbons (NRs) have been at the forefront of materials science and nanoelectronics in recent years. State-of-the-art research on nanoscale materials has revealed that electronic, magnetic, phononic, and optical properties may differ dramatically when their one-dimensional forms are synthesized. The present article aims to review the recent advances in synthesis techniques and theoretical studies on NRs. The structure of the review is organized as follows: After a brief introduction to low dimensional materials, we review different experimental techniques for the synthesis of graphene nanoribbons (GNRs) with their advantages and disadvantages. In addition, theoretical investigations on width and edge-shape-dependent electronic and magnetic properties, functionalization effects, and quantum transport properties of GNRs are reviewed. We then devote time to the NRs of the transition metal dichalcogenides (TMDs) family. First, various synthesis techniques, E-field-tunable electronic and magn...

Novel silicon phases and nanostructures for solar energy conversion

Abstract: Silicon exhibits a large variety of different bulk phases, allotropes, and composite structures, such as, e.g., clathrates or nanostructures, at both higher and lower densities compared with diamond-like Si-I. New Si structures continue to be discovered. These novel forms of Si offer exciting prospects to create Si based materials, which are non-toxic and earth-abundant, with properties tailored precisely towards specific applications. We illustrate how such novel Si based materials either in the bulk or as nanostructures may be used to significantly improve the efficiency of solar energy conversion devices.

Pathways to exotic metastable silicon allotropes

Abstract: The Group 14 element silicon possesses a complex free-energy landscape with many (local) minima, allowing for the formation of a variety of unusual structures, some of which may be stabilized at ambient conditions. Such exotic silicon allotropes represent a significant opportunity to address the ever-increasing demand for novel materials with tailored functionality since these exotic forms are expected to exhibit superlative properties including optimized band gaps for solar power conversion. The application of pressure is a well-recognized and uniquely powerful method to access exotic states of silicon since it promotes large changes to atomic bonding. Conventional high-pressure syntheses, however, lack the capability to access many of these local minima and only four forms of exotic silicon allotropes have been recovered over the last 50 years. However, more recently, significant advances in high pressure methodologies and the use of novel precursor materials have yielded at least three more recoverable exotic Si structures. This review aims to give an overview of these innovative methods of high-pressure application and precursor selection and the recent discoveries of new Si allotropes. The background context of the conventional pressure methods and multitude of predicted new phases are also provided. This review also offers a perspective for possible access to many further exotic functional allotropes not only of silicon but also of other materials, in a technologically feasible manner.

Progresses on the theory and application of quartz crystal microbalance

Abstract: Quartz crystal microbalance (QCM) is a nondestructive technique in investigating the physical properties of solid-liquid interfacial layer in situ. It has the capability of quantifying the extremely tiny force change occurring on the interface by measuring the frequency shift Δ f and the energy dissipation change Δ D (or the half-bandwidth variation Δ Γ). The quantitative analysis of QCM results greatly depends on the theoretical models, whose development could generally expand the comprehension of the properties at the interfaces and the application of QCM. In the paper, the progresses on the theory and applications of QCM are reviewed. The commonly used theoretical models for a single layer in the gas/liquid phase are essential for QCM in the fields of biosensor application, surface chemistry study, and interfacial rheology, such as the adsorption of proteins, the polymer and surfactants, and the viscoelastic properties of the interfacial liquid layer. The advanced models, incorporating the effects of b...

Broadband angular selectivity of light at the nanoscale: Progress, applications, and outlook

Abstract: Humankind has long endeavored to control the propagation direction of light. Since time immemorial, shades, lenses, and mirrors have been used to control the flow of light. In modern society, with the rapid development of nanotechnology, the control of light is moving toward devices at micrometer and even nanometer scales. At such scales, traditional devices based on geometrical optics reach their fundamental diffraction limits and cease to work. Nano-photonics, on the other hand, has attracted wide attention from researchers, especially in the last decade, due to its ability to manipulate light at the nanoscale. This review focuses on the nano-photonics systems that aim to select light based on its propagation direction. In the first half of this review, we survey the literature and the current state of the art focused on enabling optical broadband angular selectivity. The mechanisms we review can be classified into three main categories: (i) microscale geometrical optics, (ii) multilayer birefringent materials, and (iii) Brewster modes in plasmonic systems, photonic crystals, and metamaterials. In the second half, we present two categories of potential applications for broadband angularly selective systems. The first category aims at enhancing the efficiency of solar energy harvesting, through photovoltaic process or solar thermal process. The second category aims at enhancing light extracting efficiency and detection sensitivity. Finally, we discuss the most prominent challenges in broadband angular selectivity and some prospects on how to solve these challenges.

Inertial rotation measurement with atomic spins: From angular momentum conservation to quantum phase theory

Abstract: Rotation measurement in an inertial frame is an important technology for modern advanced navigation systems and fundamental physics research. Inertial rotation measurement with atomic spin has demonstrated potential in both high-precision applications and small-volume low-cost devices. After rapid development in the last few decades, atomic spin gyroscopes are considered a promising competitor to current conventional gyroscopes—from rate-grade to strategic-grade applications. Although it has been more than a century since the discovery of the relationship between atomic spin and mechanical rotation by Einstein [Naturwissenschaften, 3(19) (1915)], research on the coupling between spin and rotation is still a focus point. The semi-classical Larmor precession model is usually adopted to describe atomic spin gyroscope measurement principles. More recently, the geometric phase theory has provided a different view of the rotation measurement mechanism via atomic spin. The theory has been used to describe a gyro...

Laser hyperdoping silicon for enhanced infrared optoelectronic properties

Abstract: Pulsed laser melting and rapid solidification have attracted interest for decades as a method to achieve impurity concentrations in silicon orders of magnitude above the equilibrium solubility limit. The incorporation of sulfur into silicon using this technique led to the observation of strong broadband infrared absorption in the resulting material. This observation, combined with interest in impurity band optoelectronic device concepts, has resulted in renewed interest in laser techniques for achieving high impurity concentrations. In this paper, I review the literature that led to the present understanding of laser hyperdoping and provide a summary of the optical and optoelectronic measurements made on sulfur hyperdoped silicon to date. I mention recent work exploring transition metal impurities and discuss how considerations discovered in early solidification and later rapid solidification work inform our approaches to kinetically trapping such impurities. I also provide a simplified picture of how a laser hyperdoping process is typically carried out, as an entry point for an experimentalist seeking to fabricate such layers.

Second order optical nonlinearity in silicon by symmetry breaking

Abstract: Although silicon does not possess a dipolar bulk second order nonlinear susceptibility due to its centro-symmetric crystal structure, in recent years several attempts were undertaken to create such a property in silicon. This review presents the different sources of a second order susceptibility (χ(2)) in silicon and the connected second order nonlineareffects which were investigated up to now. After an introduction, a theoretical overview discusses the second order nonlinearity in general and distinguishes between the dipolar contribution—which is usually dominating in non-centrosymmetric structures—and the quadrupolar contribution, which even exists in centro-symmetric materials. Afterwards, the classic work on second harmonic generation from silicon surfaces in reflection measurements is reviewed. Due to the abrupt symmetry breaking at surfaces and interfaces locally a dipolar second order susceptibility appears, resulting in, e.g., second harmonic generation. Since the bulk contribution is usually small, the study of this second harmonic signal allows a sensitive observation of the surface/interface conditions. The impact of covering films, strain, electric fields, and defect states at the interfaces was already investigated in this way. With the advent of silicon photonics and the search for ever faster electrooptic modulators, the interest turned to the creation of a dipolar bulk χ(2) in silicon. These efforts have been focussing on several experiments applying an inhomogeneous strain to the silicon lattice to break its centro-symmetry. Recent results suggesting the impact of electric fields which are exerted from fixed charges in adjacent covering layers are also included. After a subsequent summary on “competing” concepts using not Si but Si-related materials, the paper will end with some final conclusions, suggesting possible future research direction in this dynamically developing field.

Liquid metal alloy ion sources—An alternative for focussed ion beam technology

Abstract: Today, Focused Ion Beam (FIB) processing is nearly exclusively based on gallium Liquid Metal Ion Sources (LMIS) But, many applications in the μm- or nm range could benefit from ion species other than gallium: local ion implantation, ion beam mixing, ion beam synthesis, or Focused Ion Beam Lithography (IBL) Therefore, Liquid Metal Alloy Ion Sources (LMAIS) represent a promising alternative to expand the remarkable application fields for FIB Especially, the IBL process shows potential advantages over, eg, electron beam or other lithography techniques: direct, resistless, and three-dimensional patterning, enabling a simultaneous in-situ process control by cross-sectioning and inspection Taking additionally into account that the used ion species influences significantly the physical and chemical nature of the resulting nanostructures—in particular, the electrical, optical, magnetic, and mechanic properties leading to a large potential application area which can be tuned by choosing a well suited LMAIS

Soft chemical synthesis of silicon nanosheets and their applications

Abstract: Two-dimensional silicon nanomaterials are expected to show different properties from those of bulk silicon materials by virtue of surface functionalization and quantum size effects. Since facile fabrication processes of large area silicon nanosheets (SiNSs) are required for practical applications, a development of soft chemical synthesis route without using conventional vacuum processes is a challenging issue. We have recently succeeded to prepare SiNSs with sub-nanometer thicknesses by exfoliating layered silicon compounds, and they are found to be composed of crystalline single-atom-thick silicon layers. In this review, we present the synthesis and modification methods of SiNSs. These SiNSs have atomically flat and smooth surfaces due to dense coverage of organic moieties, and they are easily self-assembled in a concentrated state to form a regularly stacked structure. We have also characterized the electron transport properties and the electronic structures of SiNSs. Finally, the potential applications of these SiNSs and organic modified SiNSs are also reviewed.

Bright focused ion beam sources based on laser-cooled atoms.

Abstract: Nanoscale focused ion beams (FIBs) represent one of the most useful tools in nanotechnology, enabling nanofabrication via milling and gas-assisted deposition, microscopy and microanalysis, and selective, spatially resolved doping of materials. Recently, a new type of FIB source has emerged, which uses ionization of laser cooled neutral atoms to produce the ion beam. The extremely cold temperatures attainable with laser cooling (in the range of 100 μK or below) result in a beam of ions with a very small transverse velocity distribution. This corresponds to a source with extremely high brightness that rivals or may even exceed the brightness of the industry standard Ga+ liquid metal ion source. In this review, we discuss the context of ion beam technology in which these new ion sources can play a role, their principles of operation, and some examples of recent demonstrations. The field is relatively new, so only a few applications have been demonstrated, most notably low energy ion microscopy with Li ions. ...

Growth far from equilibrium: Examples from III-V semiconductors

Abstract: The development of new applications has driven the field of materials design and synthesis to investigate materials that are not thermodynamically stable phases. Materials which are not thermodynamically stable can be synthesized and used in many applications. These materials are kinetically stabilized during use. The formation of such metastable materials requires both an understanding of the associated thermochemistry and the key surface transport processes present during growth. Phase separation is most easily accomplished at the growth surface during synthesis where mass transport is most rapid. These surface transport processes are sensitive to the surface stoichiometry, reconstruction, and chemistry as well as the growth temperature. The formation of new metastable semiconducting alloys with compositions deep within a compositional miscibility gap serves as model systems for the understanding of the surface chemical and physical processes controlling their formation. The GaAs1−yBiy system is used he...

Texture in thin film silicides and germanides: A review

Abstract: Silicides and germanides are compounds consisting of a metal and silicon or germanium. In the microelectronics industry, silicides are the material of choice for contacting silicon based devices (over the years, CoSi2, C54-TiSi2, and NiSi have been adopted), while germanides are considered as a top candidate for contacting future germanium based electronics. Since also strain engineering through the use of Si1−xGex in the source/drain/gate regions of MOSFET devices is an important technique for improving device characteristics in modern Si-based microelectronics industry, a profound understanding of the formation of silicide/germanide contacts to silicon and germanium is of utmost importance. The crystallographic texture of these films, which is defined as the statistical distribution of the orientation of the grains in the film, has been the subject of scientific studies since the 1970s. Different types of texture like epitaxy, axiotaxy, fiber, or combinations thereof have been observed in such films. In...

Multifunctional epitaxial systems on silicon substrates

Abstract: Multifunctional heterostructures can exhibit a wide range of functional properties, including colossal magneto-resistance, magnetocaloric, and multiferroic behavior, and can display interesting physical phenomena including spin and charge ordering and strong spin-orbit coupling. However, putting this functionality to work remains a challenge. To date, most of the work reported in the literature has dealt with heterostructures deposited onto closely lattice matched insulating substrates such as DyScO3, SrTiO3 (STO), or STO buffered Si(100) using concepts of lattice matching epitaxy (LME). However, strain in heterostructures grown by LME is typically not fully relaxed and the layers contain detrimental defects such as threading dislocations that can significantly degrade the physical properties of the films and adversely affect the device characteristics. In addition, most of the substrates are incompatible with existing CMOS-based technology, where Si (100) substrates dominate. This review discusses recent advances in the integration of multifunctional oxide and non-oxide materials onto silicon substrates. An alternative thin film growth approach, called “domain matching epitaxy,” is presented which identifies approaches for minimizing lattice strain and unwanted defects in large misfit systems (7%–25% and higher). This approach broadly allows for the integration of multifunctional materials onto silicon substrates, such that sensing, computation, and response functions can be combined to produce next generation “smart” devices. In general, pulsed laser deposition has been used to epitaxially grow these materials, although the concepts developed here can be extended to other deposition techniques, as well. It will be shown that TiN and yttria-stabilized zirconia template layers provide promising platforms for the integration of new functionality into silicon-based computer chips. This review paper reports on a number of thin-film heterostructure systems that span a variety of ferroelectric, multiferroic, magnetic, photocatalytic, and smart materials. Their properties have been extensively investigated and their functionality found to be comparable to films grown on single-crystal oxide substrates previously reported by researchers in this field. In addition, this review explores the utility of using laser processing to introduce stable defects in a controlled way and induce magnetism and engineer the optical and electrical properties of nonmagnetic oxides such as BaTiO3, VO2, NiO, and TiO2 as an alternative for incorporating additional magnetic and conducting layers into the structure. These significant materials advancements herald a flurry of exciting new advances in CMOS-compatible multifunctional devices.

Clathrates and beyond: Low-density allotropy in crystalline silicon

Abstract: In its common, thermodynamically stable state, silicon adopts the same crystal structure as diamond. Although only a few alternative allotropic structures have been discovered and studied over the past six decades, advanced methods for structure prediction have recently suggested a remarkably rich low-density phase space that has only begun to be explored. The electronic properties of these low-density allotropes of silicon, predicted by first-principles calculations, indicate that these materials could offer a pathway to improving performance and reducing cost in a variety of electronic and energy-related applications. In this focus review, we provide an introduction and overview of recent theoretical and experimental results related to low-density allotropes of silicon, highlighting the significant potential these materials may have for technological applications, provided substantial challenges to their experimental preparation can be overcome.

Optical tracking of nanoscale particles in microscale environments

Abstract: The trajectories of nanoscale particles through microscale environments record useful information about both the particles and the environments. Optical microscopes provide efficient access to this information through measurements of light in the far field from nanoparticles. Such measurements necessarily involve trade-offs in tracking capabilities. This article presents a measurement framework, based on information theory, that facilitates a more systematic understanding of such trade-offs to rationally design tracking systems for diverse applications. This framework includes the degrees of freedom of optical microscopes, which determine the limitations of tracking measurements in theory. In the laboratory, tracking systems are assemblies of sources and sensors, optics and stages, and nanoparticle emitters. The combined characteristics of such systems determine the limitations of tracking measurements in practice. This article reviews this tracking hardware with a focus on the essential functions of nanoparticles as optical emitters and microenvironmental probes. Within these theoretical and practical limitations, experimentalists have implemented a variety of tracking systems with different capabilities. This article reviews a selection of apparatuses and techniques for tracking multiple and single particles by tuning illumination and detection, and by using feedback and confinement to improve the measurements. Prior information is also useful in many tracking systems and measurements, which apply across a broad spectrum of science and technology. In the context of the framework and review of apparatuses and techniques, this article reviews a selection of applications, with particle diffusion serving as a prelude to tracking measurements in biological, fluid, and material systems, fabrication and assembly processes, and engineered devices. In so doing, this review identifies trends and gaps in particle tracking that might influence future research.

Connecting point defect parameters with bulk properties to describe diffusion in solids

Abstract: Diffusion is a fundamental process that can have an impact on numerous technological applications, such as nanoelectronics, nuclear materials, fuel cells, and batteries, whereas its understanding is important across scientific fields including materials science and geophysics. In numerous systems, it is difficult to experimentally determine the diffusion properties over a range of temperatures and pressures. This gap can be bridged by the use of thermodynamic models that link point defect parameters to bulk properties, which are more easily accessible. The present review offers a discussion on the applicability of the cBΩ model, which assumes that the defect Gibbs energy is proportional to the isothermal bulk modulus and the mean volume per atom. This thermodynamic model was first introduced 40 years ago; however, consequent advances in computational modelling and experimental techniques have regenerated the interest of the community in using it to calculate diffusion properties, particularly under extrem...