W
W.B. de Boer
Researcher at Delft University of Technology
Publications - 56
Citations - 927
W.B. de Boer is an academic researcher from Delft University of Technology. The author has contributed to research in topics: Chemical vapor deposition & Boron. The author has an hindex of 17, co-authored 56 publications receiving 906 citations. Previous affiliations of W.B. de Boer include Philips.
Papers
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Journal ArticleDOI
Diffusion in strained Si(Ge).
TL;DR: In this paper, the authors infer the mechanisms of Ge and B diffusion in strain-free and compressively strained Si(Ge) at T1030 \ifmmode^\circ\else\textdegree\fi{}C, and draw some general conclusions on strain modified diffusion in crystalline solids.
Journal ArticleDOI
Low-temperature chemical vapor deposition of epitaxial Si and SiGe layers at atmospheric pressure
W.B. de Boer,D. J. Meyer +1 more
TL;DR: In this article, the authors determined the low-temperature limit for the growth of Si and Si1−xGex epitaxial layers in an atmospheric pressure chemical vapor deposition (CVD) reactor.
Journal ArticleDOI
On the optimization of SiGe-base bipolar transistors
Raymond J. E. Hueting,J.W. Slotboom,Armand Pruijmboom,W.B. de Boer,Cornelis Eustatius Timmering,N. E. B. Cowern +5 more
TL;DR: In this article, an optimization study on n-p-n SiGe-base bipolar transistors has been performed using computer simulations focusing on the effect of the Ge profile on the electrical characteristics.
Proceedings ArticleDOI
QUBiC4X: An f/sub T//f/sub max/ = 130/140GHz SiGe:C-BiCMOS manufacturing technology witg elite passives for emerging microwave applications
P. Deixler,Angel Rodríguez,W.B. de Boer,H. Sun,R. Colclaser,D. Bower,N. Bell,A. Yao,R. Brock,Y. Bouttement,G.A.M. Hurkx,L.F. Tiemeijer,J.C.J. Paasschens,H.G.A. Huizing,D.M.H. Hartskeerl,P. Agrarwal,P.H.C. Magnee,Eyup Aksen,J.W. Slotboom +18 more
TL;DR: Deixler et al. as discussed by the authors proposed QUBiC4X, a cost-effective ultra-high-speed SiGe:C RF-BiCMOS technology for emerging microwave applications with NPN fr/f, up to l30/140GHz, enhanced RF-oriented 2.5V CMOS with 88% power-added efficiency, distinguished substrate isolation, full suite of elite high-density passives, 5 metal layers and an advanced design flow.
Journal ArticleDOI
High-Efficiency Silicon Photodiode Detector for Sub-keV Electron Microscopy
A. Sakic,G. van Veen,K. Kooijman,P. Vogelsang,T.L.M. Scholtes,W.B. de Boer,Jaber Derakhshandeh,W.H.A. Wien,S. Milosavljevic,Lis K. Nanver +9 more
TL;DR: In this article, a silicon photodiode detector is presented for use in scanning electron microscopy (SEM), which is achieved for sub-keV electron energy values by employing a pure boron (PureB) layer photodiodes technology to deposit nanometer-thin photosensitive anodes.