W
W. Götz
Researcher at Hewlett-Packard
Publications - 4
Citations - 1217
W. Götz is an academic researcher from Hewlett-Packard. The author has contributed to research in topics: Light-emitting diode & Diode. The author has an hindex of 3, co-authored 4 publications receiving 1190 citations.
Papers
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Journal ArticleDOI
High-power AlGaInN flip-chip light-emitting diodes
Jonathan J. Wierer,Daniel A. Steigerwald,Michael R. Krames,J. O'Shea,M. J. Ludowise,G. Christenson,Y. C. Shen,C. H. Lowery,Paul S. Martin,S. Subramanya,W. Götz,Nathan F. Gardner,R. S. Kern,S. A. Stockman +13 more
TL;DR: In this article, the authors presented a flip-chip light-emitting diodes (FCLEDs) with a large emitting area (∼0.70 mm2) and an optimized contacting scheme allowing high current (200-1000 mA, J∼30-143 A/cm2) operation with low forward voltages.
Journal ArticleDOI
Blue-emitting InGaN–GaN double-heterostructure light-emitting diodes reaching maximum quantum efficiency above 200A∕cm2
TL;DR: In this article, the authors determined that Auger recombination is the limiting factor for quantum efficiency for InGaN-GaN (0001) light-emitting diodes (LEDs) at high current density.
Journal ArticleDOI
Hall-effect characterization of III–V nitride semiconductors for high efficiency light emitting diodes
TL;DR: In this paper, variable-temperature Hall-effect measurements were employed to optimize doping for GaN layers utilized in blue, blue-green and green light emitting diodes (LEDs).
Book ChapterDOI
Chapter 3 High-Brightness Nitride-Based Visible-Light-Emitting Diodes
TL;DR: In this paper, high-brightness nitride-based visible-light-emitting diodes (LEDs) are used for traffic signal heads and traffic signal lights.