Walid Redjem

TL;DR: In this article, the carrier dynamics in G-centers in silicon have been investigated by using time-resolved photoluminescence spectroscopy, and the authors obtained an estimation of 1.6$\pm$0.1 $\angstrom$ for the spatial extension of the electronic wave function in the G-center.

TL;DR: In this article, the isolation of single optically active point defects in a commercial silicon-on-insulator wafer implanted with carbon atoms has been shown to be achievable at single scale, like in widebandgap semiconductors.

TL;DR: In this article, the detection of individual emitters in silicon belonging to seven different families of optically active point defects is reported, which are created by carbon implantation of a commercial silicon-on-insulator wafer usually employed for integrated photonics.

TL;DR: The Berkeley surface-emitting laser (BerkSEL) as discussed by the authors is a single-mode light source with linear dispersion that exhibits the scaling of losses in reciprocal space.

TL;DR: In this paper, a commercial silicon-on-insulator wafer implanted with carbon atoms has been shown to exhibit a bright, linearly polarized single-photon emission with a quantum efficiency of the order of unity at wavelengths suitable for long-distance propagation in optical fibres.