A. Benali

TL;DR: In this article, the carrier dynamics in G-centers in silicon have been investigated by using time-resolved photoluminescence spectroscopy, and the authors obtained an estimation of 1.6$\pm$0.1 $\angstrom$ for the spatial extension of the electronic wave function in the G-center.

TL;DR: In this article, the isolation of single optically active point defects in a commercial silicon-on-insulator wafer implanted with carbon atoms has been shown to be achievable at single scale, like in widebandgap semiconductors.

TL;DR: This work synthesizes arrays of parallel ultra-long, monocrystalline, silicon-based nano-wires and complex, connected circuits exploiting low-resolution etching and annealing of thin silicon films on insulator and fabricates field-effect transistors with state-of-the-art trans-conductance and electron mobility.

TL;DR: In this article, the detection of individual emitters in silicon belonging to seven different families of optically active point defects is reported, which are created by carbon implantation of a commercial silicon-on-insulator wafer usually employed for integrated photonics.

TL;DR: It is shown that monocrystalline semiconductor-based structures, in particular Si_{1-x}Ge_{x} layers deposited on silicon-on-insulator substrates, can undergo spinodal solid-state dewetting featuring correlated disorder with an effectivehyperuniform character, proving the generality of the approach and paving the way for technological applications of disordered hyperuniform metamaterials.