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Weinan Lin
Researcher at National University of Singapore
Publications - 61
Citations - 2178
Weinan Lin is an academic researcher from National University of Singapore. The author has contributed to research in topics: Magnetization & Ferromagnetism. The author has an hindex of 23, co-authored 60 publications receiving 1367 citations. Previous affiliations of Weinan Lin include Nanyang Technological University & King Abdullah University of Science and Technology.
Papers
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Journal ArticleDOI
Emergence of Topological Hall Effect in a SrRuO3 Single Layer
Qing Qin,Liang Liu,Weinan Lin,Xinyu Shu,Qidong Xie,Zhi Shiuh Lim,Changjian Li,Shikun He,Gan Moog Chow,Jingsheng Chen +9 more
TL;DR: It is proposed that the large SOC of Ru ions together with the broken inversion symmetry, mainly from the interface, produce the DMI that is responsible for the observed topological Hall effect in SrRuO3 single layer.
Journal ArticleDOI
Current-induced magnetization switching in all-oxide heterostructures.
Liang Liu,Qing Qin,Weinan Lin,Changjian Li,Qidong Xie,Shikun He,Xinyu Shu,Chenghang Zhou,Zhi Shiuh Lim,Jihang Yu,W. M. Lü,Mengsha Li,Xiaobing Yan,Xiaobing Yan,Stephen J. Pennycook,Jingsheng Chen +15 more
TL;DR: Current-induced spin–orbit torque switches the magnetization in SrIrO3/SrRuO3 bilayer structures at 70 K in the absence of an external magnetic field.
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Deterministic conversion between memory and threshold resistive switching via tuning the strong electron correlation.
TL;DR: It is shown that rationally adjusting the stoichiometry and the associated defect characteristics enables controlled room temperature conversions between two distinct RS modes, i.e., nonvolatile memory switching and volatile threshold switching, within a single device.
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Symmetry-dependent field-free switching of perpendicular magnetization.
Liang Liu,Chenghang Zhou,Xinyu Shu,Changjian Li,Tieyang Zhao,Weinan Lin,Jinyu Deng,Qidong Xie,Shaohai Chen,Jing Zhou,Rui Guo,Han Wang,Jihang Yu,Shu Shi,Ping Yang,Stephen J. Pennycook,Aurelien Manchon,Jingsheng Chen +17 more
TL;DR: An out-of-plane SOT in an HM/FM bilayer of L11-ordered CuPt/CoPt and field-free switching of the perpendicular magnetization of the CoPt layer is observed, demonstrating the intrinsic nature of the 3m torque, which strongly depends on the relative orientation of the current flow and the crystal symmetry.
Journal ArticleDOI
Control of Synaptic Plasticity Learning of Ferroelectric Tunnel Memristor by Nanoscale Interface Engineering
Rui Guo,Ya-Xiong Zhou,Lijun Wu,Zhuo-Rui Wang,Zhi Shiuh Lim,Xiaobing Yan,Weinan Lin,Han Wang,Herng Yau Yoong,Shaohai Chen,Ariando,Thirumalai Venkatesan,John Wang,Gan Moog Chow,Alexei Gruverman,Xiangshui Miao,Yimei Zhu,Jingsheng Chen +17 more
TL;DR: An electronic synapse based on a ferroelectric tunnel memristor, where its synaptic plasticity learning property can be controlled by nanoscale interface engineering is reported, which gives useful insights on tuning device functionalities through nanoscales interface engineering.