Wengang Wu

TL;DR: In this paper, a fully recessed Al2O3/GaN gate-recessed MOSFET using a low-damage digital recess technique featuring multiple cycles of plasma oxidation and wet oxide removal process was reported.

TL;DR: The novel surface-enhanced Raman scattering (SERS) sensor shows much higher measurement repeatability than the open substrate, and it reduces the sample preparation time from several hours to a few minutes, which makes the device more reliable and facile for trace chemical and biological analysis.

TL;DR: In this paper, a self-terminating gate recess etching technique was proposed to fabricate normally off AlGaN/GaN MOSFETs, which exhibited a threshold voltage as high as 3.2 V with a maximum drain current over 200 mA/mm and a 60% increased breakdown voltage than that of the conventional high electron mobility transistors.

TL;DR: A frequency-independent compact model for silicon on-chip spiral inductors with an asymmetric double-pi equivalent circuit incorporating high-order parasitics such as skin effect and proximity effect and a novel approach to extracting the model parameters is developed based on measured S-parameters.

TL;DR: The soft-switched pulsed I-V measurement provides an effective method to distinguish between the surface- and buffer-related current collapse in group III-nitride HEMTs.