M
Maojun Wang
Researcher at Peking University
Publications - 119
Citations - 2134
Maojun Wang is an academic researcher from Peking University. The author has contributed to research in topics: Threshold voltage & High-electron-mobility transistor. The author has an hindex of 22, co-authored 96 publications receiving 1647 citations. Previous affiliations of Maojun Wang include Hong Kong University of Science and Technology.
Papers
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Journal ArticleDOI
High-Performance Normally-Off ${\rm Al}_{2}{\rm O}_{3}/{\rm GaN}$ MOSFET Using a Wet Etching-Based Gate Recess Technique
Ye Wang,Maojun Wang,Bing Xie,Cheng P. Wen,Jinyan Wang,Yilong Hao,Wengang Wu,Kevin J. Chen,Bo Shen +8 more
TL;DR: In this paper, a fully recessed Al2O3/GaN gate-recessed MOSFET using a low-damage digital recess technique featuring multiple cycles of plasma oxidation and wet oxide removal process was reported.
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Al 2 O 3 /AlN/GaN MOS-Channel-HEMTs With an AlN Interfacial Layer
TL;DR: In this article, a monocrystalline AlN interfacial layer is inserted between the amorphous Al�Ω 2�O� 3cffff gate dielectric and the GaN channel to prevent the formation of detrimental Ga-O bonds.
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Kink Effect in AlGaN/GaN HEMTs Induced by Drain and Gate Pumping
Maojun Wang,Kevin J. Chen +1 more
TL;DR: In this paper, the authors studied the kink effect in conventional AlGaN/GaN high-electron-mobility transistors by measuring their currentvoltage characteristics with various bias sweeping conditions at drain and gate terminals.
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Ultrathin-Barrier AlGaN/GaN Heterostructure: A Recess-Free Technology for Manufacturing High-Performance GaN-on-Si Power Devices
Sen Huang,Xinyu Liu,Xinhua Wang,Xuanwu Kang,Jinhan Zhang,Jie Fan,Shi Jingyuan,Ke Wei,Yingkui Zheng,Hongwei Gao,Qian Sun,Maojun Wang,Bo Shen,Kevin J. Chen +13 more
TL;DR: In this article, an ultrathin-barrier (UTB) AlGaN/GaN heterostructure that features a natural pinched-off 2-D electron gas channel was developed for fabrication of high-yield lateral GaN-based power devices.
Interface Characterization of Normally-Off Al2O3/AlN/GaN MOS-Channel-HEMTs with an AlN Interfacial Layer
TL;DR: In this paper, a high performance normally off Al2O3/AlN/GaN MOS-channel high electron mobility transistor (MOSC-HEMT) featuring a monocrystalline AlN interfacial layer inserted between the amorphous Al 2O3 gate dielectric and the GaN channel is presented.