Y
Yilong Hao
Researcher at Peking University
Publications - 181
Citations - 2111
Yilong Hao is an academic researcher from Peking University. The author has contributed to research in topics: Surface micromachining & Etching (microfabrication). The author has an hindex of 22, co-authored 172 publications receiving 1770 citations.
Papers
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Journal ArticleDOI
High-Performance Normally-Off ${\rm Al}_{2}{\rm O}_{3}/{\rm GaN}$ MOSFET Using a Wet Etching-Based Gate Recess Technique
Ye Wang,Maojun Wang,Bing Xie,Cheng P. Wen,Jinyan Wang,Yilong Hao,Wengang Wu,Kevin J. Chen,Bo Shen +8 more
TL;DR: In this paper, a fully recessed Al2O3/GaN gate-recessed MOSFET using a low-damage digital recess technique featuring multiple cycles of plasma oxidation and wet oxide removal process was reported.
Journal ArticleDOI
Nanometer-precision linear sorting with synchronized optofluidic dual barriers
Yuzhi Shi,S. Xiong,Lip Ket Chin,Jingbo Zhang,Wee Ser,Jiu Hui Wu,Tianning Chen,Zhenchuan Yang,Yilong Hao,Bo Liedberg,Peng Huat Yap,Din Ping Tsai,Cheng-Wei Qiu,Cheng-Wei Qiu,Ai Qun Liu,Ai Qun Liu +15 more
TL;DR: This work reveals an unprecedentedly meaningful damping scenario that enriches the fundamental understanding of particle kinetics in intriguing optical systems, and offers new opportunities for tumor targeting, intracellular imaging, and sorting small particles such as viruses and DNA.
Journal ArticleDOI
Microstructure and origin of dislocation etch pits in GaN epilayers grown by metal organic chemical vapor deposition
Lin Lu,Z. Y. Gao,B. G. Shen,Feng Xu,Sen Huang,Z. L. Miao,Yilong Hao,Zhijian Yang,G. Y. Zhang,X. P. Zhang,Jianbin Xu,Dapeng Yu +11 more
TL;DR: In this article, three types of etch pits (α, β, and γ) are observed: the α type etch pit shows an inversed trapezoidal shape, the β one has a triangular shape, and the γ type has a combination of triangular and trapezoid shapes.
Journal ArticleDOI
The compatibility of ZnO piezoelectric film with micromachining process
TL;DR: In this article, the compatibility of ZnO piezoelectric films with the process of micromachining was investigated and some suggestions about the subsequent steps were given.
Journal ArticleDOI
Investigation of Surface- and Buffer-Induced Current Collapse in GaN High-Electron Mobility Transistors Using a Soft Switched Pulsed \(I-V\) Measurement
Maojun Wang,Dawei Yan,Chuan Zhang,Bing Xie,Cheng P. Wen,Jinyan Wang,Yilong Hao,Wengang Wu,Bo Shen +8 more
TL;DR: The soft-switched pulsed I-V measurement provides an effective method to distinguish between the surface- and buffer-related current collapse in group III-nitride HEMTs.