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Wu Chuangui
Researcher at University of Electronic Science and Technology of China
Publications - 111
Citations - 739
Wu Chuangui is an academic researcher from University of Electronic Science and Technology of China. The author has contributed to research in topics: Thin film & Layer (electronics). The author has an hindex of 11, co-authored 111 publications receiving 549 citations.
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Journal ArticleDOI
Key concepts behind forming-free resistive switching incorporated with rectifying transport properties
Yao Shuai,Xin Ou,Wenbo Luo,Arndt Mücklich,Danilo Bürger,Shengqiang Zhou,Wu Chuangui,Yuanfu Chen,Wanli Zhang,Manfred Helm,Manfred Helm,Thomas Mikolajick,Oliver G. Schmidt,Heidemarie Schmidt +13 more
TL;DR: The resistive switching in Au/BiFeO3/Pt/Ti capacitor-like structures needs no electroforming process, and is incorporated with rectifying properties which is potentially useful to suppress the sneak current in a crossbar architecture.
Journal ArticleDOI
Rectifying filamentary resistive switching in ion-exfoliated LiNbO3 thin films
Xinqiang Pan,Yao Shuai,Wu Chuangui,Wenbo Luo,Xiangyu Sun,Huizhong Zeng,Shengqiang Zhou,Roman Böttger,Xin Ou,Thomas Mikolajick,Wanli Zhang,Heidemarie Schmidt +11 more
TL;DR: In this article, the resistive switching properties of ion-exfoliated LiNbO3 thin films have been investigated and it was shown that the local filament does not penetrate throughout the thin film, resulting in asymmetric contact barriers at the two interfaces.
Journal ArticleDOI
Nonvolatile Multilevel Resistive Switching in $ \hbox{Ar}^{+}$ Irradiated $\hbox{BiFeO}_{3}$ Thin Films
Yao Shuai,Xin Ou,Wenbo Luo,N. Du,Wu Chuangui,Wenxu Zhang,Danilo Bürger,Christian Mayr,Rene Schuffny,S. Zhou,Manfred Helm,Heidemarie Schmidt +11 more
TL;DR: In this article, low-energy ion irradiation has been applied to an Au/BiFeO3/Pt capacitor structure before deposition of the Au top electrode, which exhibits multilevel resistive switching without detrimental resistance degradation, making the intermediate resistance states more distinguishable, as compared with the nonirradiated thin film.
Journal ArticleDOI
Great enhancement of pyroelectric properties for Ba0.65Sr0.35TiO3 films on Pt–Si substrates by inserting a self-buffered layer
TL;DR: In this paper, the mechanism of nucleus formation and the growth initiation of (100)-Ba0.65Sr0.35TiO3 (BST) films were proposed.
Journal ArticleDOI
Resistive switching behavior in single crystal SrTiO3 annealed by laser
Xinqiang Pan,Yao Shuai,Wu Chuangui,Wenbo Luo,Xiangyu Sun,Ye Yuan,Shengqiang Zhou,Xin Ou,Wanli Zhang +8 more
TL;DR: In this article, single crystal SrTiO 3 (STO) wafers were annealed by XeCl laser with different fluences of 0.4, 0.6, and 0.8, respectively.